国家/地区 中国（6） 美国（2） 世界知识产权组织（2）
IPC部 C（6） H（3） G（2）
IPC大类 C01（5） H01（3） G01（2）
IPC小类 C01B（5） H01L（3） G01N（2）
IPC C01B031/04（5） G01N027/00（2） H01L021/02（2）
发明人 LIANG C（7）
公开年 2014（4）
申请年 2013（4） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（7）

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Nitrogen oxide gas sensor has micro heater platform substrate that is provided with sulfur doped graphene, and test electrode and heater that are arranged on substrate, and graphene that is configured to cover test electrode.

GUO L, LI T, LIANG C, WANG Y

Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Preparing sulfur doped graphene using chemical vapor deposition method comprises e.g. providing metal substrate, placing in chemical vapor deposition reaction chamber, introducing inert gas, carrying out aeration and exhaust gas treatment.

LI T, LIANG C, WANG Y

Method for transferring graphene into flexible substrate, involves coating flexible substrate with glue, attaching flexible substrate with graphene of raw substrate, and washing graphene substrate or flexible substrate and hard substrate.

LI T, LIANG C, WANG W, WANG Y

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y