国家/地区 中国（14）
IPC部 C（10） H（4） B（3）
IPC大类 C01（8） C09（4） H01（4）
B82（2）
IPC小类 C01B（8） C09K（4） H01L（4）
B82Y（2）
IPC C01B031/04（7） B82Y040/00（2） C01B031/02（2）
C09K005/14（2） C09K011/65（2） H01L021/336（2）
发明人 XIE X（14）
公开年 2014（8） 2013（4） 2015（2）
申请年 2013（14）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（14）

Use of germanium based graphene for producing antimicrobial effect by inhibiting Gram-positive bacteria e.g. Staphylococcus aureus, and Gram-negative bacteria e.g. Escherichia coli, providing anti-fatigue effect and inhibiting tumor.

DI Z, CHEN D, DING G, GUO Q, LI J, LIU X, WANG G, XIE X, ZHANG M, ZHENG X

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Nanofiltration membrane for preparing fluorescent graphene quantum dots contains functional layer containing set of filter holes and supporting layer containing set of filter holes in which supporting layer is connected to functional layer.

XIE X, JIANG M, XU X, YANG S, LI X, DING G, SUN J, HE P

Preparing graphene oxide powder comprises adding graphite oxide in aqueous solution of graphene oxide quantum dots to form a mixed solution of graphene oxide and ammonium salts of the quantum dot.

XIE X, JIANG M, DING G, SUN J, HE P

Purifying graphene oxide quantum dots involves mixing aqueous solution of oxidized graphene quantum dots with surfactant to form mixed solution, followed by adding non-polar solvent, extracting graphene oxide quantum dots, and drying them.

XIE X, JIANG M, DING G, SUN J, HE P

Graphene device manufacturing method, involves forming PMMA layer on PVA layer, where thicknesses of PVA layer and PMMA layer are in specific range, and graphene layer formed in PMMA layer.

WANG H, JIANG M, XIE X, WU T, SUN Q, XIE H

Manufacture of vertical-graphene heat-radiating material involves performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth substrate, and transferring vertical-graphene.

WANG H, XIE X, WANG L, ZHANG Y, LIU J

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Manufacturing method of graphene field effect transistor, involves etching surface of carbon nanotransistor and connecting carbon nanotransistor to sub-electrodes to form graphene nanometer belt on semiconductor substrate.

SUN Q, XIE X, WU T, XIE H, WANG H