国家/地区 美国（7） 中国（3） 台湾（3）
IPC部 H（7）
IPC大类 H01（7）
IPC小类 H01L（7）
IPC H01L029/66（5） H01L021/02（4） H01L029/06（3）
H01L029/16（3） H01L029/423（3） H01L021/20（2）
H01L027/12（2） H01L029/78（2）
发明人 YANG C（3） LIN H（2） LIU C（2）
PAN S C（2） YEH L（2）
公开年 2017（7）
申请年 2016（5） 
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（7）

Method for fabricating semiconductor device, involves performing annealing process that serves to convert carbon-containing layer into graphene layer, after depositing metal layer.

CHEN M, PAN S C, HSIEH C

Structure for providing a Gate-All-Around (GAA) device, includes nanobar which extends from graphene layer and along direction normal to vertical plane defined by graphene layer.

YANG C, LIU C, LIN H, YEH L

Semiconductor device for electronic application e.g. personal computer, has first insulating layer that is formed over first portion of first graphene layer.

YANG T, BAO T, LIN T, CHU W, YANG D, ZHU W

Method for manufacturing pellicle, involves forming oxide layer over supporting substrate, forming metal layer over oxide layer, forming graphene layer over metal layer, and removing portion of supporting substrate and oxide layer.

MA J, WU T, YANG C, CHERN C S, LIN C, LIN Y, MA Z, WU X, YANG Q, CHEN Q, LIN Z, CHERN C

Method for fabricating gate-all-around (GAA) device for manufacturing semiconductor integrated circuit, involves extending nanobar in direction parallel to horizontal plane and normal to vertical plane defined by graphene layer.

YANG C, LIU C, LIN H, YEH L

Method for forming dual-gated graphene device, involves performing annealing process, after transferring graphene layer, and forming annealed graphene layer with secondary carrier mobility greater than transferred carrier mobility.

LIU S, PAN S C, WU C, CHENG T, CHENG C, PAN Z, WU Z, PAN S Z

Semiconductor device, has graphene channel fixed between first and second source/drain regions, and substrate whose top surface lies in first plane, where bottom surfaces of first source/drain region and gate lie in second plane.

LIN M, LIN S, LEE S