国家/地区 中国（7）
IPC部 H（6） C（2）
IPC大类 H01（6）
IPC小类 H01L（5）
IPC H01L021/336（2） H01L029/78（2） H01L045/00（2）
发明人 ZHANG W（5） SUN Q（4） WANG P（3）
JIANG T（2） WU D（2） ZHOU P（2）
公开年 2010（5） 2011（2）
申请年 2010（7）
专利权人 UNIV FUDAN（7）

Method for depositing high dielectric constant material on graphene surface atomic layer in manufacture of integrated circuit, involves applying electric field to cavity in which silicon substrate with graphene is placed.

WANG P, ZHANG W, JIANG T, SUN Q

Graphene transistor used in carbon based integrated circuit, has graphene layer that is isolated between second insulator layer and gate electrode through air gap.

WANG P, ZHANG W, JIANG A, JIANG T, SUN Q

Tin oxide or graphene nano compound for use in lithium battery, is made of bar-shaped tin oxide nano particles and graphene having predetermined length.

YU C, ZHOU L, WANG Y, ZHANG J, HUANG X

Disposable programmable storage unit for disposable programmable storage has graphene oxide layer which is disposed between upper electrode and lower electrode, and used as storage medium layer.

ZHOU P, ZHANG W, WU D, SUN Q

Resistor-type memory preparation method, involves performing industrial reaction ion etching oxidization and remote plasma oxidization treatment to graphene layer to form graphene oxide layer, and forming upper electrode.

ZHOU P, ZHANG W, WU D, SUN Q

Preparation of dry graphene powder involves dispersing graphene suspended solution in organic solvent, and freeze-drying.

FENG J, WU P, CAO Y

Graphene metal oxide semiconductor (MOS) transistor for graphene-based integrated circuit, has gate region arranged on trench region while gate medium is arranged between gate region and trench region.

WANG P, ZHANG W, LIU H, GU J