国家/地区 中国（15）
IPC部 H（10） C（6） B（2）
G（2）
IPC大类 H01（10） C08（3） C01（2）
IPC小类 H01L（10） C08K（3） C01B（2）
C08F（2）
IPC H01L029/78（4） H01L021/336（3） C08F120/14（2）
C08K007/24（2） C08K009/02（2） H01L029/16（2）
H01L029/51（2）
发明人 WANG P（15）
公开年 2011（4） 2012（3） 2014（3） 2016（2）
申请年 2010（3）  2011（3）  2013（3）  2012（2）  2017（2） 
专利权人 UNIV FUDAN（15）

Three-dimensional printed aerogel based on graphene oxide used for Joule heating and electromagnetic shielding in piezoelectric sensor comprises specified ranges of graphene oxide aqueous dispersion and average particle size.

LU H, MA J, RUAN Y, WANG P, LIU Q

Preparing nylon 6-graphene composition, comprises e.g. adding expanded graphite into concentrated sulfuric acid,and oxidant, placing expansion graphite little oxide into de-ionized water,adding surfactant and carrying out ultrasonic.

LU H, WANG P

Preparation of graphene-modified polymethyl methacrylate composite material with super high conductivity by mixing slightly oxidized expanded graphite mixed solution and hydrolyzed silane coupling agent solution and continuously reacting.

LU H, WANG P

Preparation of graphene modified polymethyl methacrylate composite material used in vehicle, involves dispersing graphene to N-methyl pyrrolidone, adding methyl methacrylate and benzoyl peroxide mixed liquid to solution and reacting.

LU H, WANG P, ZHANG J

Channel width controlled large area graphene nanometer belt Fin-FET device, has transfer graphene-containing layer formed on source/drain electrode of substrate, where part of graphene-containing layer is located on medium layer of gate.

SUN Q, WANG P, ZHOU P, ZHANG W, DAI Y

Graphene oxide-based flexible charge trap memory has charge trap layer which is made of graphene oxide and is provided on upper surface of charge tunneling layer.

WANG P, ZHOU P, ZHANG W, SUN Q, WANG L

Graphene belt based spin valve contains edged carbon atoms as graphene nanometer belt spin transport channel, and is prepared by cleaning doped silicon substrate and applying silicon dioxide layer on silicon substrate.

WANG P, ZHOU P, ZHANG W, SUN Q, WANG L

Method for increasing high-k dielectric constant on graphene buffer layer utilized for manufacturing carbon-based integrated circuit, involves providing graphene thin film to grow high dielectric constant and preparing buffer solution.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W

Method for growing high k dielectric for e.g. use in nanoscale preparation of planar device, involves using zinc oxide seed layer to prepare zinc oxide thin film on graphene film by using electron beam vacuum evaporation.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W

Method for measuring thickness and band structure of graphene film, involves establishing proper theory model according to structure of film and fitting analyzed elliptical data to aluminum foil stock to establish theory model base.

SHEN Y, SUN Q, WANG P, ZHANG W, ZHOU P