国家/地区 中国（12）
IPC部 H（8） C（3） G（3）
IPC大类 H01（8） G01（3）
IPC小类 H01L（4） H01G（3） G01R（2）
IPC H01G011/30（3） H01G011/36（3） H01G011/86（3）
G01R019/00（2） H01G011/24（2） H01L033/00（2）
发明人 ZHANG R（4） ZHOU Y（3） HU W（2）
LU Y（2） MENG X（2） TANG S（2）
XIE H（2） XU F（2） YAN S（2）
ZHENG B（2）
公开年 2015（9） 2016（3）
申请年 2015（12）
专利权人 UNIV NANJING（12）

Diaminobenzene-functionalized graphene-doped activated carbon composite electrode useful in electric adsorption device, is prepared by mixing diaminobenzene-functionalized graphene and activated carbon and film forming.

LI A, SONG H, WANG B, WANG C

Nano noble metal composite catalyst comprises three dimensional network structure of graphene, where noble metal nano-particles attached to graphene surface which is coated with polymeric microspheres.

HOU M, WANG Z, YU L, SHEN L, JI Y

Graphene quantum dot large scale preparation method involves taking conductive carbon black and nitric acid, stirring, oil bath heating, raising temperature, pumping argon gas, evaporating, obtaining solid, and adding deionized water.

DU Y, SUN Y, TANG N, ZHONG W, LIU F

Method for preparing nitrogen-doped graphite alkene composite electrode material, involves obtaining oxidation graphene, carbon dioxide and product, and obtaining product mixed liquid by heating and drying alcohol after freezing.

MENG X, TANG S, XIE H

Method for preparing three-dimensional network nitrogen-doped graphene composite hexagonal cobalt hydroxide nano-sheet electrode material, involves cooling mixture, followed by cleaning and drying by freeze dryer.

MENG X, TANG S, XIE H

Reagent kit useful in multicolor visual detection of antigen-antibody, comprises e.g. labeled methyl red modified graphene carcinoembryonic antigen antibody and labeled phenolphthalein modified graphene Cyfra21-1 antibody.

LI C, LI G, WU D, LI T, WEI L

Graphene temperature sensor integrated LED device, has LED device unit and temperature sensor part fixed on chip, where temperature sensor part is connected with graphene device unit.

LI J, ZHANG R, ZHOU Y

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

UV semiconductor light-emitting device, has p-type layer adhered on electric conduction reflection layer, and graphene-silver nanometer composite layer adhered with p-type layer to form ohmic contact area.

ZHANG R, ZHOU Y, YU X

Infrared light detection transistor of spectrum detection analysis device, has carbon nano tube layer that is arranged between source and drain electrodes formed in graphene layer which is contacted with gate medium layer.

LI Y, XU Y, ZHANG R, LIU Y, WANG F