国家/地区 中国（15）
IPC部 H（11） C（3） G（2）
IPC大类 H01（11） C30（2）
IPC小类 H01L（6） H01Q（5） C30B（2）
H01C（2）
IPC H01L021/335（3） H01L029/778（3） H01Q015/00（3）
C30B028/14（2） C30B029/16（2） H01C007/00（2）
H01L031/0336（2） H01L031/109（2） H01Q001/27（2）
H01Q001/36（2） H01Q001/38（2） H01Q017/00（2）
发明人 HAO Y（5） ZHANG J（5） MA P（4）
WU B（4） CHEN B（2） DU M（2）
GUO H（2） HE Y（2） HU Y（2）
LAN Z（2） LI J（2） LI W（2）
LIU J（2） LIU Z（2） MAO W（2）
公开年 2021（10） 2022（5）
申请年 2021（15）
专利权人 UNIV XIDIAN（15）

Simulation design method of two-dimensional Janus-type carbon phosphorus sulfur compound material containing Dirac cone, involves replacing two carbon atoms in specified position in graphene rectangular supercell with two phosphorus atoms and two sulfur atoms respectively,.

ZHOU L, SI Z, SONG Y, CHAI C, ZHANG W

Gas detecting device based on graphene film quartz tuning fork in industrial process and biomedicine field, has upper computer for processing piezoelectric signal after phase-locked demodulation to obtain gas concentration of gas to be detected.

GAO M, SHAO X, ZHANG X, LI J, YIN X

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Enhanced switch transistor for use as basic device of power electronic system, comprises barrier layer between gallium nitride grid and drain electrode provided with modulation electrode, and modulation electrode composed of array strip.

HAO Y, ZHANG J, ZHANG P, MA P, DU M, YANG C, PEI C, MAO W

Device useful as normal-off channel modulation device and as basic device in power electronic system, comprises barrier layer provided with P-GaN gate, gate metal deposited on upper part of P-GaN gate and barrier layer provided with source electrode and drain electrode.

HAO Y, ZHANG J, ZHANG P, MA P, DU M, YANG C, PEI C, MAO W

Checkerboard graphene metasurface for generating non-coplanar split beams, has graphene metasurface units that exhibit cross-polarized electromagnetic response state which is used to generate out-of-plane anomalous reflected beams.

LI J, YANG R

Gallium nitride material structure for third-generation wide-bandgap semiconductor materials, comprises substrate layer whos back surface is provided with multiple through holes, nucleation layer, transition layer, buffer layer, channel layer, composite barrier layer and metal electrode.

HAO Y, ZHANG W, ZHANG Y, ZHAO S, ZHOU H, SONG K, LIU J, ZHANG J, HAO L, LIU Z

Transferring two-dimensional transition metal chalcogenide based on polyvinyl alcohol used for manufacturing heterojunction, by dripping polyvinyl alcohol solution on growth substrate, heating to form film, sticking side of film with metal chalcogenide compound, lightly pressing, and removing film.

XIE Y, ZHANG Z, BAI Y, WANG H, LIU Z, LI P

Heterojunction photoelectric detector useful for detecting ultraviolet radiation in sun-blind area, comprises single layer graphene set between silicon carbide and gallium oxide and connected with two electrodes.

HE Y, YUAN H, WANG Y, GUO H, LAN Z, HU Y