国家/地区 美国（12）
IPC部 C（9） H（8） B（3）
IPC大类 H01（8） C01（6） B82（3）
C23（3） C12（2） C30（2）
IPC小类 C01B（6） H01L（5） B82Y（3）
C23C（3） C12N（2） C30B（2）
H01G（2） H01M（2）
IPC C01B031/04（5） H01L029/16（4） B82Y030/00（3）
B82Y040/00（3） C23C016/26（3） H01L021/02（3）
C12N005/00（2） C23C016/02（2） C23C016/56（2）
C30B025/02（2） H01L029/66（2） H01M004/587（2）
发明人 ZHANG Y（12） DARLAND D（2） DENG P（2）
GUO H（2） LEI T（2） ZHANG K（2）
ZHAO J X（2）
公开年 2014（4） 2012（2）
申请年 2012（4）  2014（3） 
专利权人 ZHANG Y（12）

Stable three-dimensional material matrix used in cell culture systems, has graphene-containing material, polymer crosslinked with graphene-containing material, and salt crystals integrated with graphene-containing material and polymer.

DARLAND D, ZHAO J X, ZHANG Y

Making a porous three-dimensional graphene mesh used in stable three-dimensional material matrix and three-dimensional porous graphene, involves combining graphene-containing material and polymer with multiple hydroxyl groups in alcohol.

ZHANG Y, ZHAO J X, DARLAND D

Preparing high-infrared emissivity graphene/manganese dioxide porous material involves dissolving graphene powder in distilled water and ultrasonically dispersing to completely dispersing graphene, and adding potassium permanganate.

DING A, CHEN G, ZHANG Y

Preparation of graphene used in e.g. gas absorption application, involves immersing refined coal powder in activating solution, carbonizing obtained molten mixture, acid-washing and water-washing obtained carbonized product, and drying.

ZHANG Y

Electronic device using graphene to grow semiconductors, has epitaxial layers of semiconductor material that are grown on defect-free graphene layer disposed on substrate.

ZHANG Y, TSU R, YUE N

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Monolayer graphene photodetector manufacturing method involves forming electron trapping center in graphene quantum dot array, which is formed in graphene monolayer.

ZHANG Y, WANG Q

Composition used for removing components from fluids e.g. sewage water and waste water, and for forming capacitor, comprises structure having graphene sheets and carbon nanotubes disposed between graphene sheets.

WEI L, ZHANG Y

Material composition used for electrode e.g. cathode for battery e.g. lithium-sulfur battery, comprises graphene oxide-sulfur nanocomposite including graphene oxide containing functional groups, and sulfur bonded to carbon atoms.

ZHANG Y, CAIRNS E J, JI L, RAO M, CAIRNS E

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F