国家/地区 韩国（12） 美国（10） 世界知识产权组织（7） 中国（2）
IPC部 H（10） B（8） C（6）
G（2）
IPC大类 H01（9） B82（6） C01（6）
C23（5） B32（4） B05（2）
G06（2） H05（2）
IPC小类 H01L（7） B82Y（6） C01B（6）
C23C（5） B32B（4） H01B（4）
B05D（2） G06F（2） H05K（2）
IPC C01B031/02（6） B82Y040/00（5） B82Y030/00（4）
C23C016/26（4） C01B031/04（3） H01B001/04（3）
B05D005/12（2） B32B009/00（2） B32B015/04（2）
G06F003/041（2） G06F003/045（2） H01L029/78（2）
H01L029/786（2） H01L031/04（2） H05K013/00（2）
发明人 AHN J（13）
公开年 2012（6） 2011（5） 2013（2）
申请年 2011（13）
专利权人 GRAPHENE SQU.（8） UNIV SUNGKYU.（8） UNIV SUNGKYU.（5） UNIV SUNGKYU.（4）
SAMSUNG TECH.（3） HANWHA TECHW.（2）

Radio frequency device with suspended graphene, comprises a substrate, a trench formed on substrate, and a source electrode, drain electrode and gate electrode formed on upper part of suspended graphene or substrate.

AHN J, HONG B H, JANG H, LEE C

Stable graphene film for graphene transparent electrode for touch screen, comprises graphene film and conductive protective film.

AHN J H, HONG B H, YAN C, AHN J

Flexible solar cell, has bottom electrode provided with opening part, insulating layer fixed at opening part of bottom electrode, graphene layer formed on insulating layer, and upper electrode arranged between insulating and graphene layers.

AHN J, HONG B H, LEE S K, YAN C

Flexible/stretchable semiconductor device such as Si FET used in electronic device e.g. LCD, includes a semiconductor layer formed on flexible/stretchable substrate, and graphene electrode formed on semiconductor layer.

AHN J, HONG B H, JANG S, JANG H, LEE W H, HYEON A J, HUI H B, JAE J S, UK J H, HO L W

Elastic-type three dimensional touch sensor for use with e.g. personal digital assistant, has controller supplying voltage to graphene electrode patterns to sense pressure intensity of reduced pressure register.

AHN J, HONG B H, LEE Y B, BAE S K, KIM H K, BAE S, HONG B, KIM H, LI R, AN Z, PEI X, JIN J

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Manufacture of graphene used for e.g. graphene sheet, involves reacting reaction gas including carbon source, and heat on substrate.

AHN J, BAE S K, HONG B H, JUNG M H, KIM H R, KIM S J, AHN J H, BAE S

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J

Flexible transparent heating element for use in home electronics, has graphene electrode connected to graphene layer in flexible transparent substrate for generating heat, and metal layer formed between substrate and graphene layer.

AHN J, BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, CHOI J B