国家/地区 韩国（24）
IPC部 C（19） B（10） H（6）
IPC大类 C01（12） B01（7） C23（7）
H01（6） C08（4） B32（2）
C09（2）
IPC小类 C01B（12） C23C（7） B01J（6）
H01L（5） C08J（4） B32B（2）
C09D（2）
IPC C01B031/04（5） B01J019/08（4） C01B032/194（4）
C23C016/26（3） B32B009/00（2） B32B037/24（2）
C01B032/184（2） C08J003/20（2） C08J007/04（2）
C23C014/06（2） C23C016/32（2） H01L021/768（2）
发明人 AHN S（24）
公开年 2021（7） 2022（7） 2018（4） 2017（2）
申请年 2019（6）  2021（6）  2020（4）  2015（3）  2016（2）  2017（2） 
专利权人 KOREA INST S.（13） SAMSUNG ELEC.（2） UNIV INHA RE.（2）

Transparent electrode for electronic device, has transparent conductive film made of transparent conductive material, and flakes of two-dimensional transition metal dichalcogenide material dispersed on surface of transparent conductive film.

KIMTAEWAN, PARK J H, CHO J, HEE J Y, YOON J H, AHN S, GWAK J, CHO A, YOO J S, EO Y J, KIM K H, SHIN D H, INYOUNG C, MIN S S, LEE S M, LEE A, CHAN H

Producing graphene useful in e.g. nanomaterial, ink, heat dissipation material, ultra-light material, energy electrode material, and transparent electrode, comprises performing heat treatment of trinaphthotrinaphthylene-based compound.

AHN S, HWANG J Y, KIM Y J, KANG M S

Producing graphene nanocomposite powder comprises charging metal wire into mixed solution in which graphene oxide is dispersed, and applying energy to metal wire charged in mixed solution to electrically explode metal wire.

HWANG J Y, AHN S, YANG C M, NAM J, GI L W, YU S

Semiconductor device, has first interconnection layer connected with first via and protruded upward from upper surface of insulating layer in direction, and interconnection structure provided with second via and second interconnection layer.

LEE W, JUNG D, LEE S J, AHN S, SHIN J, YOUNG J D

Filler composite material used for high voltage switchgear, comprises heterogeneous material composite particles including host and guest particles comprising zinc oxide, silicon dioxide, and aluminum oxide or silicate and polymer resin.

CHAE J, LEE S, KIM Y N, AHN S, WOO K, CHOI Y

Semiconductor process wastewater treatment system used for removing ionic substances, has processing unit configured to receive semiconductor process wastewater and treat the semiconductor process wastewater through many operation and membrane filtration tank arranged separately from processing unit.

CHA M, KIM S, PARK C, AHN S, SEHYUK A, PARK C H, KIM S Y

Method for forming interconnect structure for semiconductor devices, involves forming carbon layer having bonding structure on first metal layer of substrate, and forming second metal layer of substrate electrically connected to first metal layer.

LEE Y, SHIN H, SHIN J, BYUN K, LEE W, AHN S, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE Y S, SHEN X, LI Y

Stretchable gas barrier laminate structure useful e.g. for electronic device, comprises film having gas barrier properties formed on stretchable substrate, includes corrugation.

OUNG P S, KIM Y J, JI I, AHN S, BAE S K, LEE S K

Graphene composite barrier film comprises organic thin film provided on inorganic thin film, graphene film, and primer layer provided between organic thin film and graphene film.

KIM M J, JANG S G, AHN S, TAE Y H, KIM J H, KIM H

Method for manufacturing three-dimensional laminated structure of photosensor, involves forming quantum dot layer with quantum dots of core-shell structure on portion of detailed block layer, and forming multilayer structure with detailed block layers.

IK S D, AHN S, JAE P Y, LEE K S