国家/地区 中国（11） 韩国（7） 美国（7） 欧洲专利局（EPO）（3） 日本（3） 世界知识产权组织（2）
IPC部 H（10） C（9） B（4）
IPC大类 H01（10） C01（6） C23（5）
B82（2）
IPC小类 C01B（6） H01L（6） C23C（5）
B82Y（2） H01M（2）
IPC H01L021/02（6） C01B032/186（4） C23C016/26（4）
B82Y040/00（2） C23C016/02（2） C23C016/46（2）
H01L021/205（2） H01L021/36（2） H01L029/06（2）
H01L033/00（2） H01L033/02（2） H01L033/12（2）
H01M004/88（2） H01M004/92（2）
发明人 AN S（16）
公开年 2020（4） 2023（3） 2012（2） 2018（2） 2021（2）
申请年 2022（4）  2019（3）  2020（3）  2011（2） 
专利权人 SAMSUNG ELEC.（5） UNIV INNER M.（3） AN S（2） KIM S（2）
KUMOH NAT IN.（2） LEE D（2） LG SILTRON I.（2） SK SILTRON C.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Fabricating semiconductor device involves loading substrate with structure having opening, into process chamber, forming two-dimensional material layers on upper surface of structure, to overlie opening and form air-gap, where upper portion of air-gap, is defined by two-dimensional material layers.

SHIN K, LEE S, YOON J, AN S, LI Z, YOUN J, AN X, AHN S J, SU Y J, LEE S Y, SHIN K W

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Composite rare earth catalyst for fuel cell comprises rare earth oxide, activated carbon, mesoporous carbon, graphene, carbon nanotube, ethanolic solution of ethylene glycol, sodium borohydride, ethanolic solution of potassium borohydride, and platinum source aqueous solution.

WANG Z, XU P, RUAN F, GAO J, ZHOU F, XIE M, BAO J, SONG X, AN S, WANG Q

Preparing catalyst useful in ethanol fuel cell, comprises e.g. mixing ethylene glycol aqueous solution, graphene oxide and chloroplatinic acid, adjusting pH, performing reduction reaction to obtain intermediate product system, and mixing with second reducing agent solution.

YAO Y, WANG L, LI Y, HUANG W, PENG J, GUAN L, ZHOU G, ZHANG J, AN S, GUO R

Heating/cooling system, has graphene buried pipe network provided with first feeding pipe and first discharging pipe, and heating device provided with second feeding pipe and third discharging pipe that are connected with second feeding pipe.

LI J, BAI F, AN S

Polyurethane crosslinking reduced graphene oxide composite conductive film used as conductive film in preparation of flexible electronic device, comprises polyurethane and reduced graphene oxide, and formed by cross-linking.

LIANG G, ZHANG J, AN S, BAI S, JU S, LIU J

Graphene-coated aluminum/aluminum-based heat dissipation material comprises evaporated aluminum graphene and pure aluminum.

TANG G, LI D, HU Z, XU W, AN S, YANG X, LIU T, YI W, XU H, QU B, LI J

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C