国家/地区 美国（7）
IPC部 H（6） C（4） B（2）
IPC大类 H01（6） C23（4） C01（3）
B82（2）
IPC小类 H01L（6） C23C（4） C01B（3）
B82Y（2）
IPC H01L021/02（6） C23C016/26（4） C01B032/186（3）
B82Y040/00（2） C23C016/02（2） C23C016/46（2）
H01L021/205（2） H01L021/36（2） H01L029/06（2）
H01L033/00（2） H01L033/02（2） H01L033/12（2）
发明人 AN S（7）
公开年 2023（3） 2012（2） 2020（2）
申请年 2022（3）  2011（2）  2019（2） 
专利权人 SAMSUNG ELEC.（5） AN S（2） KIM S（2） KUMOH NAT IN.（2）
LEE D（2） LG SILTRON I.（2） SK SILTRON C.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Fabricating semiconductor device involves loading substrate with structure having opening, into process chamber, forming two-dimensional material layers on upper surface of structure, to overlie opening and form air-gap, where upper portion of air-gap, is defined by two-dimensional material layers.

SHIN K, LEE S, YOON J, AN S, LI Z, YOUN J, AN X, AHN S J, SU Y J, LEE S Y, SHIN K W

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Compound semiconductor manufacturing method, involves forming graphene-derived material layer on selected substrate, and connecting compound semiconductor layer to graphene-derived material layer.

AN S J, LEE D G, KIM S H, AN S, LEE D, KIM S

Compound semiconductor device for light emitting device i.e. LED, has oxidation graphene layer provided with oxidation graphene sheets on part of surface of substrate, and buffer layer arranged between substrate and semiconductor layer.

AN S J, LEE D G, KIM S H, LEE D K, AN S, LEE D, KIM S