国家/地区 韩国（7） 美国（7） 日本（4） 中国（3）
IPC部 H（6） B（5） C（4）
IPC大类 H01（6） B82（4） C01（4）
C23（3）
IPC小类 H01L（6） C01B（4） B82Y（3）
C23C（3） B82B（2）
IPC C01B031/02（4） B82Y030/00（3） B82Y040/00（3）
H01L029/786（3） C01B031/04（2） C23C016/26（2）
H01L021/335（2） H01L021/336（2） H01L029/78（2）
H01L051/05（2） H01L051/40（2）
发明人 CHUNG H（7）
公开年 2011（7）
申请年 2010（5）  2011（2） 
专利权人 SAMSUNG ELEC.（7）

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Graphene electronic device i.e. FET, for use in gas sensor, has interlayer dielectric formed on silicon substrate, insulating layer formed on interlayer dielectric, and graphene layer formed on insulating layer.

CHUNG H, BAEK S, SEO S, WOO Y, HEO J, SEO D, CHUNG H J, BAEK S J, SEO S A, WOO Y S, HEO J S

Spin valve device e.g. storage node useful in magnetic memory device and spin transfer nano-oscillator, comprises lower magnetic layer, graphene sheet on lower magnetic layer, upper magnetic layer on graphene sheet, and spacer.

HEO J, SEO S, WOO Y, CHUNG H, HEO J S, SEO S A, WOO Y S, CHUNG H J

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Graphene device e.g. graphene-based inverter has electrodes and graphene channel which are formed on upper oxide layer formed on embedded gate.

HEO J S, SEO S, KIM D, WOO Y, CHUNG H, JEONG H J, KIM T C, SEO S A, U Y S, CHUNG H J, KIM D C, WOO Y S, HEO J

Fixing graphene using a laser beam for manufacturing an electronic device, comprises fixing a defect in a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon, and determining the defect of the nanoribbon.

SEO S, KIM D, WOO Y, CHUNG H, HEO J, SEO S A, KIM D C, WOO Y S, CHUNG H J, HEO J S