国家/地区 中国（16）
IPC部 H（14） B（11） C（6）
G（2）
IPC大类 H01（14） B82（11） C01（5）
C23（3） H03（2）
IPC小类 H01L（14） B82Y（11） C01B（5）
C23C（3）
IPC H01L029/78（9） H01L029/786（9） H01L021/336（8）
H01L051/05（7） B82Y099/00（6） H01L029/10（6）
H01L029/16（6） B82Y030/00（5） H01L029/06（5）
H01L051/30（5） C01B031/02（4） H01L029/772（4）
B82Y010/00（3） B82Y040/00（3） C01B031/04（3）
发明人 CHUNG H（16）
公开年 2012（4） 2013（4） 2011（3） 2014（3）
申请年 2011（5）  2012（3）  2013（3）  2010（2） 
专利权人 SAMSUNG ELEC.（15）

Preparing mesenchymal-like stem cells used to treat e.g. lupus comprises inducing stem cell differentiation, loading and culturing the cystic embryoid bodies, passing cells through 3D culture unit and isolating stem cells.

HONG K S, CHUNG H M, KIM E Y, SHIN J M, KANG A R, SHIN J, KIM E, CHUNG H, HONG K

Graphene memory has Schottky barrier that is formed between conductive semiconductor substrate and graphene layer such that graphene layer is used as charge-trap layer for storing charges.

LEE J, CHUNG H, PARK S, BYUN K, SEO D, SONG H, HEO J, LEE J H, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S, HUH J, JUNG H, SONG C, SAIL D

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

UV light-emitting diode comprises n-type semiconductor layer, active layer on n-type semiconductor layer, p-type semiconductor layer of aluminum gallium nitride on active layer, and p-type graphene layer on p-type semiconductor layer.

HWANG S, KO G, SIM S, KIM J, CHUNG H, SONE C, HYEON S S, JAE J H, SEOP K J, SU S C, WON H S, U KOH G, JEONG H, KO K, SHIM S, SON C, HWANG S W, KO G W, SIM S H, KIM J S, CHUNG H J, SONE C S

Graphene transistor for use as radio frequency transistor in hybrid transistor, has cover covering upper surface of source electrode and drain electrode and forming air gap above graphene channel between source electrode and drain electrode.

CHUNG H, CHUNG U, KIM K, CHUNG H J, JOUNG W I, KIM K N, CHUNG U I, JUNG W, JUNG H, KIM G

Electrode structure for semiconductor device e.g. FET used in electronic device, has graphene layer that is configured to contact one of semiconductor layer and electrode containing metal.

YANG H, PARK S, CHUNG H, HEO J, YANG H J, PARK S J, CHUNG H J, HEO J S, HUH J, JUNG H

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H