国家/地区 美国（7） 中国（2）
IPC部 H（7） B（5）
IPC大类 H01（7） B82（5）
IPC小类 H01L（7） B82Y（5）
IPC H01L021/336（5） B82Y040/00（3） H01L029/06（3）
H01L029/16（3） H01L029/66（3） B82Y099/00（2）
H01L021/02（2） H01L021/20（2） H01L029/78（2）
H01L029/786（2）
发明人 FARMER D B（7）
公开年 2013（4） 2014（2）
申请年 2012（7）
专利权人 INT BUSINESS.（7）

Fabrication method of semiconducting device such as transistor, involves forming graphene sheet, source and drain on sheet, and slot in graphene sheet, and applying etchant to substrate through slot formed in graphene.

FARMER D B, FRANKLIN A D, SMITH J T

Method for forming graphene field-effect transistor (GFET), involves forming first graphene sheet, and coupling first gate layer to surface of first grapheme sheet to influence electric field of first grapheme sheet.

FARMER D B, FRANKLIN A D, OIDA S, SMITH J T

Graphene transistor device for graphene transistor system has interface that maintains consistent degree of electrical conductivity between graphene layer and source and drain electrodes.

AFZALIARDAKANI A, AVOURIS P, FARMER D B, LIN Y, ZHU Y

Method for fabricating graphene transistor device, involves lifting-off resist and electrode and dielectric materials arranged above resist to form gate structure with gate electrode and gate dielectric space.

AFZALIARDAKANI A, AVOURIS P, FARMER D B, LIN Y, ZHU Y

Semiconductor structure for semiconductor device, has substrate, graphene layer and double layer gate dielectric having alternate lamination of silicon nitride layer and hafnium oxide layer.

DIMITRAKOPOULOS C D, FARMER D B, GRILL A, LIN Y, NEUMAYER D A, PFEIFFER D, ZHU W, DIMITRAKOPOULOS C

Transistor structure, comprises graphene layer located on insulating layer, first metal portion overlying portion of graphene layer, second metal portion contacting and overhanging first metal portion, first electrode, and second electrode.

AVOURIS P, FARMER D B, LIN Y, ZHU Y

Formation of transistor structure involves forming graphene layer on insulating layer, forming stack of primary and secondary metal portions, and laterally offsetting sidewalls of primary metal portion relative to secondary portion.

AVOURIS P, FARMER D B, LIN Y, ZHU Y