国家/地区 中国（10）
IPC部 C（6） B（5） H（3）
IPC大类 H01（3） B01（2） C01（2）
C07（2）
IPC小类 H01L（3） B01J（2） C01B（2）
C07C（2）
IPC B01J027/138（2） B01J037/34（2） C07C045/26（2）
C07C047/06（2）
发明人 FENG T（10）
公开年 2021（7） 2022（3）
申请年 2021（10）
专利权人 INST SEMICON.（3） JIANGSU XIWA.（2） UNIV ZHEJIAN.（2）

Schottky barrier diode has graphene insertion layer is used for improving two-dimensional electron gas mobility between gallium oxide layer and barrier layer.

LI J, WANG J, YI X, LIANG M, FENG T, LIU Z

Gallium nitride (GaN)/AlGaN heterogeneous structure of graphene as insertion layer, has barrier layer which is set on graphene inserting layer and cap layer is arranged on barrier layer.

LI J, WANG J, ZHANG S, YI X, LIANG M, FENG T, LIU Z

Graphene powder preparation device comprises machine seat control panel, dry device, crushing device, feeding hopper, feeding device, sealing device, constant temperature furnace, heating device, conveying pipe, and material receiving device.

ZHANG M, DING G, FENG T

Cleaning device of graphene heat conducting film coating base material, has base material in storage device is cleaned by ultrasonic cleaning device, and then drying by dryer, at last, winding by winding device.

GU M, ZHANG K, ZHOU J, FENG T, ZHANG M, DING G, LI Y

Graphene heat conducting film coating winding cutting system, has groove located below flat knife, flat knife clamped in groove in film cutting process, and winding device comprising graphene oxide films at different flat cutter.

GU M, ZHANG K, ZHOU J, FENG T, ZHANG M, DING G, CHEN W

Modified graphene oxide used in preparation of flame retardant epoxy resin, comprises sulfate/titanium dioxide-graphene oxide, phosphate/titanium dioxide-graphene oxide, and sulfate/zirconium dioxide-graphene oxide or phosphate/zirconium dioxide-graphene oxide.

SUN C, WANG T, FENG T, GAO M

Growing nitride comprises preparing substrate, manufacturing graphene buffer layer on substrate, patterning graphene buffer layer to obtain patterned graphene buffer layer, and growing nitride on patterned graphene buffer layer.

LIU Z, FENG T, LIANG M, YI X, WANG J, LI J

Preparation of tin-based catalyst used for hydration reaction of acetylene to generate acetaldehyde by dissolving tin-containing precursor and base metal additive in solvent, stirring, dropping on porous solid carrier, soaking, and drying.

ZHAO J, YUE Y, PANG X, WANG B, ZHU W, WANG S, FENG T, WANG T, ZHAO D

Preparing double-pulse electroplating nickel-graphene composite plating layer of continuous casting crystallizer comprises processing crystallizer copper plate before electroplating, and preparing graphene oxide solution by Hummers method.

FENG T

Preparing copper-based catalyst comprises dissolving copper-containing precursor and base metal auxiliary agent in solvent, stirring, dropping mixed solution to porous solid carrier, soaking and drying.

ZHAO J, PANG X, ZHU W, YUE Y, WANG S, CHEN Z, WANG T, FENG T