国家/地区 韩国（9）
IPC部 C（5） H（5） B（2）
IPC大类 C01（4） H01（4） B01（2）
IPC小类 C01B（4） H01L（4）
IPC C01B031/04（2） C01B032/168（2） H01L021/02（2）
H01L051/00（2）
发明人 HONG S K（9）
公开年 2017（2） 2018（2）
申请年 2016（2）  2017（2） 
专利权人 KOREA ADVANC.（2） UNIV PUSAN N.（2）

Manufacturing nano-carbon material comprises doping boron into original nano-carbon material, doping carbon into boron-doped nano-carbon material, and carrying out strong acid treatment.

HWANG J Y, KOO B C, DONG K, KIM D Y, GEE H, LEE D, NAM J, KU B C, KIM N D, HONG S K, LEE D J, NAM J T

Hybrid structure formed by laminating second graphene coated with polymer on upper surface of the first graphene coated with carbon nanotubes useful for producing perovskite solar cell.

WOO C Y, CHO Y, HONG S G, KIM S, LEE H, LEE H W, HONG S K, JO Y S, KIM S M, KIM Y, OH S H, LI L

Manufacturing method for graphene-silicone fusion electric circuit element, involves forming passivation oxide layer on upper portion of silicon transistor, and through-hole passing through the passivation oxide layer is formed.

CHO B J, HONG S K, KIM C S

Manufacturing method of graphene nanoribbon used for producing up gate-type FET, involves forming reaction inhibiting layer on graphitized metal catalyst thin film, and arranging carbon source to grow graphene nanoribbons.

CHO B J, HWANG W S, HONG S K, BONG J H

Glass wall anti-fogging coating composition comprises sol solubilized graphene oxide produced by mixing non-aqueous graphene oxide slurry, precursor aqueous solution, second dispersant and polymer binder.

GYU Y K, MIN H Y, BO K L, GYEONG C C, HONG S K, SANG K L, EUI C H, MIN J S, WON W S, SUNG K C

Three-dimensional hybrid structure used for membrane filter, comprises base substrate having pores, porous graphene thin film portion, carbon structural layer, porous metal thin film portion, and metal structural layer.

HONG S K, LEE H W

Graphene thermoacoustic speaker has first electrode and second electrode formed for applying electric signal in graphene thin film.

CHO B J, CHOI J W, HONG S K, KIM C S

Manufacture of graphene involves pulverizing pure graphite, reacting resultant graphite powder with supercritical carbon dioxide generated by supercritical device, and separating graphene from obtained hexagonal carbon crystal.

HONG T E, SON J H, PARK G H, HONG S K

Manufacturing method of flexible resistance switching memory device e.g. RAM, involves forming graphene oxide layer by mixing methanol and water and arranging on bottom electrode layer on printed circuit board.

CHO B J, HONG S K