国家/地区 中国（14）
IPC部 H（8） C（7）
IPC大类 H01（8） C01（4） C04（2）
IPC小类 H01L（7） C01B（4） C04B（2）
IPC H01L029/786（5） C01B031/04（4） H01L021/336（3）
H01L021/04（2）
发明人 HU Y（14）
公开年 2013（14）
申请年 2013（13） 
专利权人 UNIV XIDIAN（9）

Preparation of micro-nano recycled corrugated fiber/graphene composite membrane involves preparing micro-nano recycled corrugated fiber; preparing graphene oxide; and preparing graphene/micro and nano biomass cellulose membrane.

LI Y, LI D, SHAO Y, ZHANG R, HU Y, KANG M, YOU Z

Preparation of nickel-plated graphene involves mixing graphene powder slowly in roughening solution, separating, washing, sensitizing graphene, activating, reducing, plating with nickel, and washing with deionized water and ethanol.

DENG L, HU Y, XIA L, YU K

New thia molecular graphene compound for building supramolecular structure.

LEE H Y, ZHANG D, JIN W, HU Y, QIN M, YIN J

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Preparing large-area graphene on silicon substrate based on nickel film annealing comprises e.g. growing carbon layer on substrate, growing C3-silicon carbide heteroepitaxial film, hydrogen etching, depositing nickel layer and annealing.

GUO H, LEI T, ZHANG F, ZHANG Y, HU Y

Manufacture of side-grid graphene transistor involves preparing film having patterns, heating, obtaining carbon film, placing in buffer solution, heating with copper film, evaporating, depositing, photoetching and drying.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG K, HU Y

Method for preparing side grid graphene transistor, involves cleaning silicon carbide, depositing silica mask layer, etching side gate structure transistor image window on silica mask layer, and forming pattern of window set in quartz tube.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG K, HU Y

Manufacture of side grid graphene transistor involves preparing carbon-silicon carbide film, depositing silicon dioxide layer, etching, carving side grid, removing silicon dioxide layer, annealing, forming metal layers and etching.

HU Y, ZHANG Y, GUO H, LEI T, WEI C, ZHANG K

Manufacture of side-gate graphene field-effect transistor involves carbonizing silicon substrate, heating substrate to grow cubic silicon carbide and forming carbon layer by reacting carbon tetrachloride and cubic silicon carbide.

HU Y, ZHANG Y, GUO H, LEI T, ZHANG K, ZHANG C

Nickel film annealing side gate graphene thin film transistor preparation method based on reaction of silicon carbide and chlorine gas, involves placing photoetched wafer in quartz tube and reacted with chline gas to form carbon film.

ZHANG Y, ZHANG K, LEI T, ZHANG C, GUO H, HU Y