国家/地区 韩国（10）
IPC部 B（8） H（8） C（7）
IPC大类 H01（7） B32（6） C01（6）
B82（5） C23（5） B29（3）
B05（2） B41（2） H05（2）
IPC小类 B32B（6） C01B（6） H01B（6）
B82Y（5） H01L（5） C23C（4）
B29C（3） B05D（2） B41M（2）
C23F（2） H05K（2）
IPC B82Y040/00（5） C01B031/04（5） B32B009/00（4）
B82Y030/00（4） C01B031/02（4） C01B032/194（4）
H01B001/04（4） C23C016/26（3） H01L029/16（3）
B32B037/00（2） B32B038/10（2） B41M005/03（2）
B41M005/10（2） C01B032/186（2） H01B005/14（2）
发明人 HUI H B（10）
公开年 2011（5） 2013（3）
申请年 2011（4）  2010（2）  2012（2） 
专利权人 GRAPHENE SQU.（7） HONG B H（6） UNIV SUNGKYU.（6） UNIV SUNGKYU.（4）
AHN J（3） KIM H K（3） BAE S（2） BAE S K（2）

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Patterning of graphene used for e.g. display device e.g. flat panel display device, involves forming graphene layer on polymer substrate, and forming nanopattern on graphene layer by hot embossing imprinting.

HONG B H, HAN J H, HUI H B, HUI H J

Producing graphene, comprises forming structures on surface of face-centered cubic metal catalyst substrate having specified orientation, and supplying hydrocarbon to substrate.

KIM K H, MAENG K S, PARK C W, CHA S W, HONG S Y, HONG B H, JUNG M H, KIM K E, PARK S B, BEOM P S, EUN K G, HUI H B, HUI J M, HYEONG K G, SEOP M G, U P C, WON C S, YEON H S

Passive element layer of e.g. display element used in e.g. electric equipment, has main layer that is provided with electromagnetic wave attenuation and heat radiation function at near-field region, and is equipped with graphene layer.

KIM S W, HONG B H, CHOI J, KANG J, HWANG S H, BUNG C J, HUI H B, HWI H S, MO G J, U KIM S, HEE H B

Flexible/stretchable semiconductor device such as Si FET used in electronic device e.g. LCD, includes a semiconductor layer formed on flexible/stretchable substrate, and graphene electrode formed on semiconductor layer.

AHN J, HONG B H, JANG S, JANG H, LEE W H, HYEON A J, HUI H B, JAE J S, UK J H, HO L W

Electromagnetic interference shielding method for electronic/electrical machinery and apparatus e.g. TV, involves forming graphene on outer side portion or inner side portion of graphene growth supporter by using chemical deposition process.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, BUNG C J, GANG B S, GEUN K H, HUI H B, JIN K Y, MO G J, BAE S, KIM H

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S

Formation of graphene protective film used as gas and moisture barrier film, involves heating substrate and reacting with reaction gas containing carbon sources, and forming graphene film by dry process, wet process, or rolling process.

AHN J, BAE S K, HONG B H, KIM H K, LEE Y, HUI H B, HYEON A J, BIN L Y, GEUN K H, GANG B S

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Roll-to-roll transfer of graphene for producing graphene roll, involves transferring graphene layer on material to substrate by passing through roller portion, immersing obtained laminate into etching solution, and removing material.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, JANG H, JANG S, KOO J B, HONG B, KIM H, HUI H B, HYEON A J, GANG B S, GEUN K H