国家/地区 韩国（41） 美国（9） 中国（3）
IPC部 H（36） C（9） B（5）
F（2） G（2）
IPC大类 H01（36） B82（4） C01（4）
C09（2） C30（2） F21（2）
IPC小类 H01L（33） C01B（4） B82B（2）
B82Y（2） C09K（2） C30B（2）
F21S（2） H01M（2）
IPC H01L033/04（9） H01L033/22（8） H01L033/06（6）
H01L033/20（6） H01L033/00（5） H01L033/16（5）
C01B031/02（4） H01L021/20（4） H01L033/14（4）
H01L033/26（4） H01L033/44（4） H01L021/205（3）
H01L051/00（3） H01L051/52（3） H01L051/54（3）
发明人 HWANG S W（41）
公开年 2012（20） 2013（9） 2011（2） 2015（2） 2022（2）
申请年 2010（19）  2011（11）  2014（2）  2015（2）  2021（2） 
专利权人 SAMSUNG ELEC.（19） SAMSUNG LED .（19） UNIV KYUNGHE.（2）

Solid electrolyte used in all-solid lithium secondary battery, comprises oxide solid electrolyte layer and polymer solid electrolytic layer, and graphene quantum dot (GQD) layer is formed between oxide and polymer electrolyte layers.

HWANG S W

Method for constructing correlation modeling system between chemical vapor deposition conditions and graphene specification results, involves training machine learning model based on regression or classification algorithm.

HWANG S W, HWANG K Y, SHIN N, KIM T

Negative electrode for lithium secondary battery, comprises crystalline carbon layer, amorphous carbon layer having network structure formed on crystalline carbon layer and lithium ion or lithium carbide compound inserted into carbon layer.

YOON J K, HWANG S, HAH H, LEE J P, LEE J, KIM H, KWON H, YOON J, HWANG S W, HA H J, KWON H J, LI T, HE H, YIN Z

Automotive electronic component e.g. audio for light amplification, has conductivity type semiconductor layer, and light emitting device having graphene quantum dot coating layer mounted on surface and interior of nanowire.

LEE B, HWANG S W

Three-dimensional graphene quantum dot (GQD) light-emitting device for light amplification, has nanowires on conductive semiconductor base layer and graphene quantum dot coating layer that is mounted on surface and interior of nanowire.

HWANG S W, CHOI S H

Film comprises atomic layer, and structure in which the graphene quantum dot is dispersed and spread on one side or both sides of the atomic layer, where graphene quantum dot is single crystalline structure of flake type.

HWANG S W, SHIN H H

Manufacture method of ultra-thin inorganic semiconductor film, involves forming ultra-thin inorganic semiconductor film on amorphous graphene layer, and transferring ultra-thin inorganic semiconductor film to target substrate.

JOO W, HWANG S, JOO W J, HWANG S W

Semiconductor device, has first gate insulating layer comprising first ion gel, channel layer comprising graphene, and second gate insulating layer comprising second ion gel, which is different from first ion gel.

KIM U, SHIM Y, PARK Y, LEE C, HWANG S, KIM U J, SHIM Y S, PARK Y S, LEE C W, HWANG S W

Semiconductor light emitting device for backlight unit of display device, has light emitting nanostructures which are disposed on openings of graphene layer of mask layer.

HWANG S W, KIM J W, AHN I H, CHOI S J

Thermoelectric structure for forming thermoelectric device for thermoelectric apparatus, comprises graphene layer, and thermoelectric component comprising thermoelectric film and quantum dot on thermoelectric film, on graphene layer.

LEE K, KIM S, HWANG S, LEE S, LEE Y, HWANG S W, KIM S I, KIM S W, LEE K H, LEE S M, LEE Y H