国家/地区 韩国（7） 美国（5）
IPC部 C（4） H（4）
IPC大类 C01（4） H01（4） C23（2）
IPC小类 C01B（4） H01L（4） C23C（2）
IPC C01B032/186（3） C23C016/02（2） C23C016/26（2）
C23C016/513（2） H01L021/02（2） H01L021/285（2）
H01L021/324（2） H01L029/16（2）
发明人 KIM C（7）
公开年 2021（4） 2022（2）
申请年 2020（7）
专利权人 SAMSUNG ELEC.（4）

Producing para-aramid fibers, comprises preparing dope for core comprising carbon filler and first aromatic polyamide polymer, and preparing dope for sheath comprising particulate additive including water-soluble polymer particles.

KIM C

Graphene quantum dot pattern useful for bio-imaging, contrast agent and drug carrier, comprises graphene quantum dots uniformly patterned on substrate through ion beam irradiation.

HA J M, LEE S H, LEE C Y, HWANGYONGSUK, SUK J, KIM C

Display device in multimedia devices such as TV set, comprises upper layer structure that comprises dielectric constant control layer which controls sensing sensitivity of input sensor.

CHOI Y S, LEE J H, KIM C, JUNG J, JUNG J W, CUI Y, LEE J, JIN Z, ZHENG Z

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C

Forming thin film of transition metal dichalcogenide, comprises providing substrate in reaction chamber, depositing transition metal dichalcogenide thin film on the substrate, and injecting chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film.

KIM C, KIM S, BYUN K, SHIN H, SOHN A, JUNG J, KIM S W, BYUN K E, SHIN H J, SOHN A R, JUNG J H

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J