国家/地区 韩国（9） 美国（8） 中国（5） 欧洲专利局（EPO）（5） 世界知识产权组织（2）
IPC部 H（8） C（4） G（2）
IPC大类 H01（8） C01（3） H10（2）
IPC小类 H01L（7） C01B（3） H10B（2）
IPC H01L029/06（4） H01L029/423（4） H01L029/786（4）
H01L021/02（3） H01L029/08（3） H01L029/16（3）
C01B032/186（2） H01L021/285（2） H01L021/336（2）
H01L027/11582（2） H01L029/417（2） H01L029/45（2）
H01L029/51（2） H01L029/66（2） H01L029/78（2）
发明人 KIM C（11）
公开年 2023（7） 2022（4）
申请年 2022（11）
专利权人 SAMSUNG ELEC.（7）

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Electronic device for use in electronic apparatus, has two-dimensional material layer formed between channel layer and gate electrode, where material layer blocks electron transfer between gate electrode and channel layer.

SHIN K, BYUN K, LEE S, KIM C, LEE C, LI C, JIN C, SHIN K W, BYUN K E, LEESANGSOO, LEE C S

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Forming thin film of transition metal dichalcogenide involves providing substrate in reaction chamber, depositing transition metal dichalcogenide thin film on substrate using sputtering process that uses transition metal precursor and chalcogen precursor and is performing at first temperature.

JUNG J, SOHN A, SHIN H, BYUN K, KIM S, KIM C

Vertical channel array transistor for use in semiconductor device, has graphene insertion layer that is formed between source/drain electrode and channel pattern.

BYUN K, KIM S, KIM C, SHIN K, LEE C, LI C, JIN C, JIN S, BYUN K E, SHIN K W, LEE C S

Multi bridge channel field effect transistor for use in e.g. memories, has gate insulating layer that surrounds first channel layer, and gate electrode that surrounds first channel layer with gate insulating layer.

KIM C, KIM U, JUNG A, BYUN K, JIN Y, JIN C, JUNG A R, BYUN K E

Semiconductor device for use in electronic apparatus, has source/drain structure including silicide film to be formed between first semiconductor region and first electrode, and conductive barrier to be formed.

KIM C, NAM S, SHIN K, LEE D, LI D, JIN C, NAM S G, SHIN K W, LEE D H

Two-dimensional microporous graphene for e.g. energy storage materials e.g. electrode active materials, electronic materials e.g. quantum dots, and membranes or films e.g. separator and chemical detector, has preset average pore size, interpore spacing, and standard deviation of interpore spacing.

KIM C, CHOI M, KI C M, KIM C H

Composite material used in solid electrolyte in electrochemical cell such as electrochemical accumulator such as lithium battery and lithium-ion battery, comprises inorganic particles, fluorinated compound, and optionally polymer.

ZHANG X, DAIGLE J, KIM C

Air safety net for use in e.g. construction site, has double elastic connection part provided with dust adsorption holes such that dust floating in air is adsorbed to surface, and graphene coating layer formed on surfaces of mesh body.

PARK M J, KIM C