国家/地区 韩国（7） 美国（7） 中国（2） 欧洲专利局（EPO）（2） 日本（2）
IPC部 C（5） H（5）
IPC大类 C01（5） H01（5） C23（3）
IPC小类 C01B（5） H01L（5） C23C（3）
IPC C01B032/186（5） H01L029/16（4） C23C016/26（3）
H01L021/02（3） C23C016/02（2） C23C016/50（2）
C23C016/511（2） C23C016/513（2） H01L021/768（2）
H01L023/522（2） H01L023/528（2） H01L023/532（2）
发明人 KIM C（7）
公开年 2020（7）
申请年 2019（5） 
专利权人 SAMSUNG ELEC.（7）

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene structure for e.g. static RAM, has silicon substrate whose surface is arranged with graphene, where material of substrate and carbon of graphene are covalently bonded and arranged between substrate surface and graphene.

LEE E, BYUN K, SONG H, SHIN H, KIM C, SHIN K, LEE C, JUNG A, BYUN K E, SONG H J, SHIN H J, SHIN K W, LEE C S, JUNG A R

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Interconnect structure for electronic device, has metal bonding layer for providing interfacial bonding between metal interconnect and graphene layer, where metal bonding layer includes metal material.

NAM S, SHIN H, SHIN K, KIM C, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, NAM S G, SHIN H J, SHIN K W, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C