国家/地区 美国（13）
IPC部 H（12） C（9） B（5）
G（3）
IPC大类 H01（11） C01（5） B32（4）
C08（4） C23（4） G09（2）
H05（2） H10（2）
IPC小类 H01L（9） B32B（4） C01B（4）
C08K（4） C23C（4） C08J（3）
C08L（3） H01B（3） G09F（2）
H05K（2） H10B（2）
IPC C08K003/04（4） C23C016/02（3） C23C016/455（3）
H01B001/04（3） H01L051/00（3） C01B031/00（2）
C01B031/02（2） C23C016/30（2） C23C016/56（2）
G09F009/30（2） H01L021/02（2） H01L027/32（2）
H01L051/56（2）
发明人 KIM H S（13）
公开年 2021（4） 2023（4）
申请年 2020（4）  2022（4）  2015（2） 
专利权人 SAMSUNG ELEC.（4） KOREA INST S.（3） UNIV SUNGKYU.（3） SAMSUNG DISP.（2）

Resin composition for semiconductor package, comprises resin composition comprising resin and filler provided in resin, where resin includes soluble liquid crystal polymer resin, where soluble liquid crystal polymer resin includes an organic soluble liquid crystalline aromatic polyester.

HWANG M Y, KIM H S, LEE K E, LEE G E, KIM H

Noble metal-manganese oxide composite catalyst for a positive electrode of an aqueous rechargeable battery that regenerates a solvent of an aqueous electrolyte.

LEE M, KIM H, NO W J, JEONG M J, JO H, OH S H, CHO H, JUNG M J, NOJU, KIM H S, LEEMINAH

Memory device used for multi-level driving, has gate electrode, gate insulating layer formed on gate electrode, tunneling insulating layer stacked on gate insulating layer, channel layer stacked on tunneling insulating layer and source electrode and drain electrode formed on channel layer.

BYUN H R, KANG S, KIM J Y, GWON O H, KIM H S, YU Y, YU Y J, KWON O, JU K, BYON H R

Semiconductor memory device comprises substrate including active region defined by device separation film, where active region including first portion and second portions, second portions being on two opposite sides of first portion, bit line on substrate and extending across active region.

KIM H, KIM S H, LEE J E, JIN X, KIM S, LI J, KIM H S

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Manufacturing display apparatus involves preparing support substrate, forming metal oxide layer on surface of support substrate, metal oxide layer comprises first charges, and forming debonding layer on surface of metal oxide layer.

SIM J, SHIN H, KIM H, SEO D, XU D, SHEN X, SHEN J, SUH D, KIM H S, SHIM J H

Method of manufacturing the display device, involves preparing a carrier substrate, while charging a surface of the carrier substrate with a negative charge, and forming an encapsulation layer on the light emitting layer.

KIM H S, SHIN H K, SIM J H, KANG T W, CHO W J, SHIN H, SHIM J H, CAO Y, JIANG T, SHEN J, SHEN X, JIN X

Forming transition metal dichalcogenide thin film on a substrate by treating substrate with metal organic material, and synthesizing a transition metal dichalcogenide on the substrate.

BYUN K, KIM H, PARK T, SHIN H, AHN W, LEEM M, CHO Y, JIN H, PIAO T, SHEN X, LIN M, ZHAO L, BYUN K E, KIM H S, PARK T J, SHIN H J, AHN W S, CHO Y C

Polypropylene-graphene composite material for e.g. vehicle component, comprises polypropylene substrate, and organic graphene oxide masterbatch obtained by reacting modified graphene oxide with maleic anhydride-grafted polypropylene.

KONG N K, KIM H S, LEE J H, LEE B C, OH Y S, PARK S Y, CHOI S M, WOO J H, KIM H, WU Y, KONG L, LEE J, LEE B, CUI C, PIAO X, YU C

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H