国家/地区 美国（14）
IPC部 H（11） C（6） B（3）
IPC大类 H01（11） C01（6） B01（2）
IPC小类 C01B（5） H01M（5） H01L（3）
H01B（2） H01J（2）
IPC H01M004/62（4） H01M010/052（4） H01M010/0525（4）
C01B031/04（3） C01B032/19（3） H01M004/04（3）
H01M004/36（3） H01M004/38（3） H01M004/587（3）
C01B032/182（2） C01B032/184（2） C01B032/194（2）
H01B001/24（2） H01J001/30（2） H01J001/304（2）
发明人 KIM I（14）
公开年 2015（5） 2017（2） 2022（2）
申请年 2014（5）  2016（2）  2021（2） 
专利权人 LG CHEM LTD（6） LG CHEM CO L.（5） SAMSUNG ELEC.（3） KOREA INST S.（2）
KUMOH NAT IN.（2）

Active material for lithium-ion secondary battery, has core particles comprising silicon oxygen-containing material or metal silicon oxygen-containing material, amorphous group 13 or group 15 material such as boron, aluminum, gallium, indium, thallium, nitrogen and bismuth coated on core particles.

YOST A, NAREN N, KIM I, HICKS K, HAYNER C M, HA S

Flash memory device for use in neuromorphic computing system, has blocking insulating layer that is arranged on floating gate and has second dielectric constant greater than first and upper gate that is disposed on blocking insulation layer.

KWAK J, PARK E P, LEE S Y, KIM I H, PARK J K, KIM J, KIL P J, JUNG Y J, JEONG Y, PARK J, KIM I, LEE S, PARK E, KWAK J Y

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H

Secondary battery for e.g. vehicle, comprises anode, cathode comprising current collector and cathode material layer containing carbon-based active material and silicon-based active material, and separator placed between cathode and anode.

KIM I, KIM I H, JIN Y

Making doped graphene thin film with mesoporous structure using flash lamp involves coating mixture solution of doping element source-having material with doping element and graphene oxide on substrate and irradiating light to the solution.

CHOI S, CHA J, KIM I, CHOI S Y, JUNHWE C, DOO K, KIM D H

Manufacturing method of electrode for hydrogen production, involves increasing activity of tungsten carbide nanoflake to hydrogen evolution reaction by removing oxide layer or graphene layer from surface of tungsten carbide nanoflake.

LEE W S, KO Y, BAIK Y J, PARK J, LEE K S, KIM I, JEONG D S, KO Y J, PARK J K

Plate-shaped material exfoliating apparatus for manufacturing graphene, consists of inlet for supplying plate-shaped material having preset velocity, high-pressure pump, microchannel, and outlet provided at rear end of microchannel.

YOO K H, KIM E J, KIM I Y, PARK P S, IM Y H, KWON W J, YOO K, KIM E, KIM I, PARK P, IM Y, KWON W

Sheet material delaminating apparatus used for manufacturing graphene, has inlet portion through which plate-shaped material is supplied, high-pressure pump for pressurizing plate-shaped material, microchannel and outlet portion.

KIM E J, YOO K H, IM Y H, KIM I Y, KWON W J, KIM E, YOO K, IM Y, KIM I, KWON W

Electron-emissive element, has graphene emitter adhered on emitter supporting unit and metal mesh, insulating layer provided with gate electrode, and gate supporting unit supported with graphene gate.

PARK S, LEE D, KIM I, SUNG J, LEE C, KANG D, YU E, PARK S H, LEE D G, KIM I H, SUNG J K, LEE C S, KANG D S, YU E A

Porous silicon-carbon composite used for negative electrode active material, comprises core including active particles containing silicon particles and/or silicon oxide particles and shell layer including graphene coated on core.

HWANG E Y, KIM I Y, LEE J Y, KWON W J, SOHN K N, YANG S B, HUANG Y, KIM I, LEE J, KWON W, SOHN K, YANG S