国家/地区 韩国（13） 美国（12） 中国（4） 欧洲专利局（EPO）（2）
IPC部 H（14） G（4） B（3）
C（3）
IPC大类 H01（14） B82（3） C01（2）
C09（2） G01（2）
IPC小类 H01L（11） H01M（3） B82Y（2）
C01B（2） G01J（2）
IPC H01L021/02（3） H01L029/16（3） H01L029/66（3）
H01L029/78（3） H01L029/786（3） B82Y099/00（2）
C01B032/194（2） H01L021/336（2） H01L029/10（2）
H01L029/417（2） H01L031/028（2） H01L033/04（2）
H01M004/134（2） H01M004/86（2） H01M004/88（2）
发明人 KIM J（14）
公开年 2021（3） 2022（3） 2013（2）
申请年 2021（3）  2013（2）  2017（2）  2022（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（14）

Epitaxy structure comprises substrate having upper surface, upper surface having single crystal structure, two-dimensional material layer provided on upper surface of substrate, and multiple of nanorod light emitting devices provided on upper surface of two-dimensional material layer.

HAN J, LEE E, SHIN D, PARK J, PARK Y, KIM J, KIM N, KONG K, CHOI J, CHOI J H, HO K, KIM N H, KIM J S, PARK Y W, PARKJUNGHOON, HAN J H

Lithium battery, e.g. solid state battery, used in electric vehicles, comprises cathode, anode, liquid-impermeable ion-conductive membrane, and interlayer has metal-carbon composite between anode and liquid-impermeable ion-conductive membrane.

LEE M, KIM J, ROEV V, KIM J S

Thin-film structure used in semiconductor element, comprises substrate, nanocrystalline graphene layer on substrate, and two-dimensional material layer on nanocrystalline graphene layer, where substrate is silicon, silicon dioxide, aluminum oxide, quartz, germanium, gallium nitride, aluminum nitride.

CHO Y, LEE Z, SHIN H, SONG S, SON S, KIM J, KWON S, LEE C, LEE C S, YONG K S, KIM J H, SONG S U, SHIN H J, YI J H, CHO Y C

Light-emitting device for e.g. displays, includes carbon-containing film comprising at least one carbon atom, and light-emitting alkylene group, where light-emitting group is chemically bonded to at least one carbon atom on surface of carbon-containing film.

HWANG K, CHOI H, KIM J, KWAK S, JEONG J, BAEK S, KIM S, BAIK M, JUNG Y, SIK C Y, BAEK M H, JUNG J H, KIM J H, CHOI H H, HWANG K Y

Gas diffusion layer for a metal-air battery comprises porous layer comprising non-conductive fiber structures and adhesive layers and conductive carbon layers, where each conductive carbon layer comprises a carbon material.

IM D, PARK J, KIM J, KIM M

Semiconductor device has gate stack containing gate insulating layer and second substrate containing polycrystalline silicon, barrier metal layer set on first gate electrode layer, and second gate electrode layer set on barrier metal layer.

KIM S H, KIM H, KIM J, CHOI C M

Manufacturing graphene-metal structure for semiconductor device by subjecting graphene to surface treatment and forming metal layer on surface-treated graphene.

KIM J H, LEE S Y, AHN S J, KIM J, LIM H S

Optical sensor for detecting target object in infrared region, comprises substrate, which is provided with topological insulator layer, where oxide layer is formed on topological insulator layer, and graphene layer is stacked on oxide layer.

KIM U, ROH Y, KIM J, IN C, CHOI H, KWON J, KIM U J, ROH Y G, KIM J S, IN C H, CHOI H Y, KWON J H

Metal-air battery utilizing oxygen as active material, comprises electrolyte which is disposed between anode portion having metal and cathode portion having porous layer which comprises reduced non-stacked graphene oxide.

JUNG I, KWON H, KIM M, KIM J, BYUN S, YU D, YUN D, LEE H, JIN M, JIN Z, LIU D, YIN T, JUNG I S, KWON H J, KIM M W, KIM J H, BYUN S J, YU D E, YUN D J, LEE H S

Hard mask composition used for manufacture of hard mask material film, comprises graphene copolymer and solvent.

KIM J, YU N, KIM B, YI S, CHOI J, KIM J H, YU N R, KIM B D, YI S S, CHOI J S