国家/地区 韩国（10） 世界知识产权组织（5） 美国（2）
IPC部 H（8） C（5） B（4）
IPC大类 H01（6） C01（5） B01（2）
H05（2）
IPC小类 C01B（4） H01M（3） B01J（2）
H01L（2） H05K（2）
IPC C01B031/04（3） B01J003/06（2） B01J006/00（2）
B01J019/10（2） C01B031/06（2） H01L029/16（2）
H01M004/587（2） H05K007/20（2）
发明人 KIM M S（10）
公开年 2017（5） 2018（3） 2016（2）
申请年 2016（10）
专利权人 ILJIN DIAMON.（2） POSTECH ACAD.（2） UNIV SEOUL N.（2） UNIV YONSEI .（2）

Nano composite for use in transparent electrode or flexible display has metal oxide nano particle including mesopore and macro pore formed between graphene layers.

LEE J, KIM M S, LIM E

Electrode consists of electrode active material containing nanocomposite including graphene layers including macropores, and mesoporous metal oxide nanoparticles provided between graphene layers.

LEE J, LIM E, KIM M S

Three-dimensional structure complex useful as negative electrode active material for sodium secondary battery, comprises alkali metal-transition metal-phosphorus-oxide-based phosphate, and graphene.

KIM K B, ROH H K, KIM M S

Heat-dissipation sheet used in electronic device, comprises thermally conductive base layer formed on one surface of heat radiation enhancing layer comprising graphene and/or graphite, and has specified horizontal thermal conductivity.

MIN E H, LEE D, KIM M S, NOH H S, HAN H J, LEE D W

Manufacturing method of graphene coating heat radiation element of electronic and electric device, involves reducing coated graphene oxide using reducing agent, and performing heat-treatment of substrate.

CHEONG I W, LEE H M, KIM M J, AN H J, KWON H B, KIM M S

Negative active material for sodium secondary battery, comprises metal phosphate particles dispersed on graphene, and having ratio of number of metal phosphate particles having particle diameter and total number of metal phosphate particles.

KIM K B, ROH H K, KIM H K, KIM M S, NOH H K

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce unreacted graphite, immersing sintered component in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce component containing unreacted graphite, immersing in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Method for manufacturing electronic component, involves forming carrier layer on graphene layer, transferring graphene layer on substrate, and removing catalyst metal layer from lower-side of graphene layer.

KIM K, KIM M, KIM K B, KIM K J, KIM M S

Semiconductor device i.e. transistor, for e.g. flat panel display, has diffusion stopper with stuffing layer partially adhered on area surface of graphene layer and including polycrystalline structure formed on areas of graphene layer.

KIM K, LEE S, KIM M, KIM K B, LEE S H, KIM K J, KIM M S