国家/地区 韩国（8） 美国（4）
IPC部 B（7） C（7） H（5）
IPC大类 B82（5） C01（5） B01（3）
H01（3） H05（3） C08（2）
C23（2）
IPC小类 B82Y（5） C01B（5） B01J（3）
B82B（3） C08K（2） C23C（2）
H01B（2） H01L（2） H05H（2）
IPC B82Y040/00（5） C01B031/02（5） B01J019/10（3）
B82B003/00（3） B82Y030/00（2） C08K003/04（2）
发明人 KIM S（9）
公开年 2013（9）
申请年 2012（9）
专利权人 CHEORWON PLA.（3） UNIV PUSAN N.（2）

Graphene-nanoparticle composite used for laminate for electrochemical device, comprises crystallized nanoparticles including nickel, silicon, titanium, chromium, manganese, iron, cobalt, silver and/or magnesium, on surface of graphene.

KIM S, CHOI S Y, SHIN M S, LEE K H, SON B G, RYU S H

Plasma process apparatus used to process e.g. graphene used in the fabrication of transistor, comprises reactor comprising electrode portions to feed constant high voltage for plasma discharge reaction generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L

Plasma processing apparatus used for changing property of material e.g. graphene, has electrode portions that are arranged to supply high voltage of constant cycle such that plasma discharge reaction is generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L

Producing graphene useful for producing supercapacitor, preferably supercapacitor electrode, comprises ultrasonically dispersing graphite oxide in a polyol solvent, adjusting pH and examining microwave pulses at predetermined time intervals.

BIN C W, KIM S, CHO W B

Manufacture of graphene/transition metal oxide nanocomposite for super capacitor, involves preparing graphite oxide powder on carbon nanomaterials, dispersing graphite oxide powder into polyol solvent and treating irradiated solution.

KIM S, PARK S K

Forming hybrid nanostructure on graphene, comprises providing graphene layer placed on substrate, forming metal layer on graphene layer, and depositing nanomaterial on graphene layer metal layer formed to form hybrid nanostructure.

KIM S, PARK H, KIM S W, PARK H K

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Metal plate e.g. steel plate, stainless plate, aluminum plate has graphene layer for oxidation prevention, coated on outer surface of nickel or copper layer that is coated on outer surface of metal plate.

KIM K I, KIM Y K, KIM S

Insulating layer composition for use in substrate of insulating prepreg or insulating film and printed circuit board, comprises soluble type liquid crystal thermosetting oligomer, metal alkoxide compound, and graphene oxide.

JI S Y, HAM S J, KIM S H, KIM D Y, YEONG J S, JIN H S, HWAN K S, YEONG K D, CHI S, KIM S, KIM D, HAM S, CHI S Y, HAMSUKJIN