国家/地区 韩国（11） 美国（11） 中国（4） 欧洲专利局（EPO）（4）
IPC部 H（11） B（7） C（5）
IPC大类 H01（10） B82（5） C01（5）
IPC小类 H01L（8） C01B（5） B82Y（4）
H01M（2）
IPC H01L029/78（5） B82Y040/00（4） C01B031/02（4）
H01L021/336（4） H01L029/16（4） H01L029/66（3）
H01L029/786（3） B82Y099/00（2） H01L021/02（2）
H01L021/04（2） H01L021/683（2） H01L029/06（2）
H01L029/417（2） H01L029/778（2） H01L051/00（2）
发明人 KIM Y（13）
公开年 2014（7） 2013（4） 2015（2）
申请年 2013（13）
专利权人 SAMSUNG ELEC.（6） KIM Y（2） LEE J（2）

Composition useful in field effect transistor type gas sensor, comprises organic semiconductor and alkylated graphene oxide.

PARK C E, KIM Y, AN T K

Donor substrate for laser transfer, has intermediate layer arranged on light-to-heat conversion layer, where light-to-heat conversion layer comprises graphene.

KWON J, YOON J, PYO S, SONG H, YOO B, LEE B, YE J, KIM Y, KWON J Y, YOON J H, PYO S W, SONG H J, YOO B W, LEE B S, YE J M, KIM Y S

Phase transfer catalyst used in addition or condensation organic reaction, comprises graphene oxide catalyst having oxygen-containing functional group.

KIM Y, LEE H, SOME S

Method for transferring graphene to manufacture e.g. bipolar junction transistor, involves bonding graphene layer to target layer, and removing sacrificial layer using excimer laser to separate substrate from graphene layer.

WENXU X, LEE J, MOON C, PARK Y, YANG W, KIM Y, XIANYU W, LEE J Y, MOON C Y, PARK Y Y, YANG W Y, KIM Y S, LEE J H

Nano laser light generating apparatus is provided with nano laser with certain minute current generated in approval in transparent graphene electrode, and transparent graphene electrode is equipped in a micro disk resonator.

GYU P H, KIM Y H, HWANG M, HONG K S, PARK H, KIM Y, KWON S

Graphene-carbon nanotube stack for electrical energy storage device, such as supercapacitor or battery, has graphene layers which are spaced away from each other and electrically connected to each other by carbon nanotubes.

KIM Y, KUMAR K, YANG E, FISHER F

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Transistor useful for electronic devices such as a radio frequency device for high frequency and display, comprises a channel layer including graphene, a gate insulating layer, a gate facing the channel layer, and a source and a drain.

LEE C, KIM Y, LEE J, JUNG Y, LEE C S, KIM Y S, LEE J H, JUNG Y S

Manufacture of electrode for forming secondary battery, involves forming pores on graphene sheet by processing with hydrofluoric acid and forming graphene composite comprising sulfur particles by growing sulfur particles.

KIM Y, PARK M, YU J, KIM Y J, PARK M S, YU J S