国家/地区 韩国（9） 美国（5） 中国（2） 欧洲专利局（EPO）（2）
IPC部 H（8） B（5） C（4）
IPC大类 H01（7） C01（4） B82（3）
IPC小类 H01L（6） C01B（4） B82Y（3）
IPC H01L029/786（5） H01L021/336（4） H01L029/78（4）
B82Y040/00（3） B82Y099/00（3） C01B031/02（3）
H01L029/16（3） H01L029/778（3） H01L021/683（2）
H01L029/417（2） H01L029/423（2） H01L029/66（2）
发明人 KIM Y（10）
公开年 2013（10）
申请年 2013（4）  2011（3）  2012（3） 
专利权人 SAMSUNG ELEC.（4） GRAPHENE SQU.（2）

Transferring graphene in substrate comprises spin-coating substrate with polymer and then curing, preparing synthesized graphene on catalytic metal, transferring graphene to substrate, and attaching graphene to surface of substrate.

JUNG S, KIM Y, LEE Y C

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Manufacture of electrode for forming secondary battery, involves forming pores on graphene sheet by processing with hydrofluoric acid and forming graphene composite comprising sulfur particles by growing sulfur particles.

KIM Y, PARK M, YU J, KIM Y J, PARK M S, YU J S

Graphene triboelectric charging device used as precast pavers on roadside for generating electricity, has friction unit which deforms electric power generating unit having triboelectric layer with triboelectric material.

KIM K I, KIM S W, KIM Y

Method for manufacturing graphene device, involves forming device portion on first substrate, which is provided with graphene layer and attaching second substrate onto device portion and removing first substrate.

LEE C, LEE J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, MOON C Y, MUN Z R

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R

Manufacture of boron-doped graphene involves mixing boron compound and graphite, and heating mixture under argon atmosphere.

KIM Y, JUNG K Y

Graphene transferring element for high radio frequency device, has metal thin-film layer pattern and graphene layer stacked on adhesive part, where metal thin- film layer pattern and graphene layer have same shape.

LEE J, LEE C, KIM Y, SONG H, HO L J, SEUNG L C, SEONG K Y, JAE S H, LEE J H, LEE C S, KIM Y S, SONG H J

Thin film transistor comprises channel region electrically connected between source and drain electrodes that include self-assembled monolayer and graphene layer, where graphene layer is formed on monolayer.

HONG B H, KIM K E, PARK J, KIM Y

Organic field-effect element thin-film transistor used for display device, has single-layer graphene source electrode, single-layer graphene drain electrode, and organic semiconductor channel layer formed on plastic substrate.

HONG B H, KIM K E, KIM Y, PARK J S