国家/地区 韩国（13） 美国（7） 中国（3） 欧洲专利局（EPO）（3）
IPC部 H（12） B（7） C（6）
IPC大类 H01（11） C01（4） B82（3）
B32（2）
IPC小类 H01L（11） C01B（4） B82Y（3）
B32B（2） H01B（2）
IPC H01L029/78（6） C01B031/02（4） H01L021/336（4）
H01L029/16（4） H01L029/66（4） H01L021/02（3）
B32B038/10（2） B82Y040/00（2） H01B013/00（2）
H01L021/20（2） H01L033/36（2）
发明人 KIM Y S（13）
公开年 2014（13）
申请年 2013（7）  2014（4）  2012（2） 
专利权人 SAMSUNG ELEC.（6） KIM Y（2） LEE J（2） UNIV SEJONG .（2）

Flexible printed circuit board consists of adhesive substrate made of polymer film to-be-attached to predetermined structure, graphene electrode and metal electrode.

KIM Y S

Method for manufacturing LED, involves arranging graphene electrode layer on structure, arranging nitride base cermets semiconductor layers with structure, and arranging active layer between nitride base cermets semiconductor layers.

PARK H J, PARK J B, JUNG S H, BAEK J H, OH H S, TAK J, JU J W, LEE S J, LEE S H, KIM J Y, JEONG T H, KIM Y S

Method for transferring graphene during manufacturing graphene applied device that is used in e.g. high speed radio frequency switching device, involves transferring protection metal layer and graphene layer from supporter to substrate.

LEE J, KIM Y, MOON C, LEE S, LEE C, LEE J H, KIM Y S, MOON C Y, LEE S H, LEE C S

Carbon-based electronic device e.g. thin-film transistor used for e.g. memory device, consists of substrate, gate insulation layer, gate electrode, and graphene oxide layer, which is partially reduced by irradiating using laser beam.

KIM Y S, CHOI H S

Encapsulation film used for e.g. thin film sensor, solar cell apparatus and optical electronic device, is formed by stacking bilayer comprising thin layer containing graphene oxide or reduced graphene oxide and organic polymer layer.

JEON J N, KIM K J, KIM Y S, LEE K S, RO J, KIM K, SANG N J, SU L G, YONG S K

Manufacturing graphene, involves pre-processing substrate using oxidization gas plasma and supplying processed gas containing carbon source to substrate.

YOON E J, YUH H K, JOO K S, CHUN S H, KIM Y S, JERNG S K

Graphene electronic device has flash memory region and ferroelectric memory region that are positioned on graphene layer.

KIM Y, LEE C, LEE J, KIM Y S, LEE C S, LEE J H

Method for transferring graphene to manufacture e.g. bipolar junction transistor, involves bonding graphene layer to target layer, and removing sacrificial layer using excimer laser to separate substrate from graphene layer.

WENXU X, LEE J, MOON C, PARK Y, YANG W, KIM Y, XIANYU W, LEE J Y, MOON C Y, PARK Y Y, YANG W Y, KIM Y S, LEE J H

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Thermal-conductive heat-radiation heat-resisting graphene coated component has protective film and coating layer having multilayered structure containing mixture of graphene and graphite particles, in specified weight ratio.

KIM Y S, AHN G H