国家/地区 韩国（20） 美国（7） 世界知识产权组织（4）
IPC部 H（13） C（8） B（4）
IPC大类 H01（13） C01（7） B01（3）
IPC小类 H01L（11） C01B（7） B01J（3）
H01B（2） H01M（2）
IPC H01L029/16（8） C01B031/02（5） H01L029/66（5）
H01L029/10（3） H01L029/78（3） H01L029/786（3）
H01L031/18（3） C01B003/00（2） C01B031/04（2）
H01B001/04（2） H01L029/06（2） H01L031/0224（2）
H01L031/028（2） H01L031/09（2） H01L031/10（2）
发明人 LEE B H（20）
公开年 2012（4） 2015（4） 2013（2） 2014（2） 2017（2） 2021（2）
申请年 2020（4）  2010（3）  2012（3）  2017（3）  2014（2）  2015（2） 
专利权人 GWANGJU INST.（13） KWAN W L（4） LEE B H（4） LEE J H（4）
REYUN K L（4）

Cosmetic composition useful for blocking high energy rays and preventing fine dust comprises core-shell particles surface-modified with coating layer containing nanomaterials e.g. fullerene, graphene, nanographite, and carbon nanotube.

PYEONGYEON C, KEUMJA J, JU Y, JOO J, LEE B H, CHO Y K, KIM J Y

Ternary logic device has first transistor and second transistor that are connected in parallel to form ternary logic element that implements logic state, and heterojunction-based multilayer channel is formed by sequentially stacking lower semiconductor material layer.

LEE K Y, JANG H, LEE D G, LEE B H

Graphene semiconductor junction device comprises substrate, gate electrode, gate insulating layer, graphene layer, semiconductor layer, drain electrode, and source electrode on graphene layer to be separated from semiconductor layer.

KIM K Y, KIM S Y, LEE B H, KIM K

Catalyst used for producing hydrogen peroxide, comprises carbon-based support, and catalytic moiety containing metal-nitrogen bonding structure, and bonded to carbon-based support.

HYEON T, SUNG Y, SHIN H, LEE B, JUNG E, SHIN H J, LEE B H, CHUNG E Y, LI B

Graphene-semiconductor hetero-junction photodetector for performing photodetection function, has drain electrode that is formed in direction perpendicular to direction in which source electrode is connected to graphene layer.

LEE B H, CHANG K E

Graphene-based ternary barrister, has gate electrode layer formed on center of substrate, source electrode layer arranged to two sides of graphene channel layer, and drain electrode layer arranged to two sides of source electrode layer.

LEE B H, SHIM C H, KIM Y J, KIM S Y

Graphene photodetector, has drain electrode formed on semiconductor substrate, and gate insulation layer formed on graphene channel, where gate electrode is formed on gate insulation layer, and comprises light transmittance.

LEE B H, CHANG K E, YOO T J, HWANG H J

Graphene transistor for inverter of electronic device, has graphene channel including graphene region opposite to another graphene region based on doped graphene region and formed with Fermi level different from that of doped region.

LEE B H, KIM Y J, KIM S Y

Manufacture of graphene hydrogel used as e.g. organic material, involves preparing polymer solution by mixing distilled water and polymer, mixing reduced graphene oxide or graphene oxide with polymer solution, stirring, and irradiating.

KIM T H, LEE B H, SUNG Y

Graphene photo detector for optical device, has doped graphene which is formed on insulating layer to chemically absorb dopant solution while auric chloride is included in interface of graphene.

KANG C G, LEE B H, LEE S K