国家/地区 韩国（10） 美国（7）
IPC部 H（7） C（6） G（4）
IPC大类 H01（6） C23（4） C01（3）
G03（3）
IPC小类 H01L（5） C23C（4） C01B（3）
G03F（3）
IPC H01L029/16（4） C01B032/186（3） C23C016/02（3）
C23C016/26（3） C23C016/50（3） G03F001/22（3）
H01L021/02（3） C23C016/513（2） G03F001/62（2）
发明人 LEE C（12）
公开年 2021（5） 2022（5） 2020（2）
申请年 2020（12）
专利权人 SAMSUNG ELEC.（6） S S TECH CO.（3）

Manufacturing composite material pellets for electromagnetic wave shielding comprises preparing long fiber reinforced thermoplastic by curing thermoplastic resin of metal-coated carbon fiber impregnated with thermoplastic resin and cutting.

LEE C, CHUNG Y H, WON J

Pellicle for extreme ultraviolet lithography, has shadow mask layer pattern that is formed between support layer pattern and central layer by etching mask layer formed between central layer and support layer by using pattern as etch mask.

LEE C, HONG J H, JEONG M W, PARK C G, YUN J W, LEESEUNGJO, KIM J, LEE H

Pellicle used for extreme ultraviolet lithography, comprises central layer formed on pellicle frame, and surface layer formed by heat treatment to include any one or more elements of carbon, nitrogen and oxygen on outside of central layer.

SHIN C, LEE C, HONG J H, YUN J W, PARK C G, LEESEUNGJO, KIM J, LEE H

Pellicle for extreme ultraviolet lithography, comprises pellicle portion that is provided with central layer, where central layer is formed on pellicle frame and multiple capping layers are formed outside central layer.

SHIN C, LEE C, HONG J H, YUN J W, PARK C G, LEESEUNGJO, KIM J, LEE H

Sensing element for detecting saliva glucose concentration of test subject, comprises conductive substrate, composite layer including carbon nanotubes and nano-gold particles, and modification layer including reduced graphene oxide nanometers.

TAI N, LEE C, CHANG C, LIN J, WU S, CHEN J, KUO Y

Positive electrode for lithium-sulfur battery, comprises current collector and positive electrode active material layer comprising positive active material comprising sulfur-carbon composite and additive comprising thiuram sulfide-based compound.

KANG D Y, MOON J, LEE C

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene structure used in electronic device, comprises substrate, and directly grown graphene directly grown on surface of substrate and has controlled surface energy, which has increased surface energy of directly grown graphene.

LEE C, LEE S, SHIN H, BYUN K, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE S Y, LEE C S

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X