国家/地区 韩国（11） 美国（8） 中国（4） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 H（8） C（4） B（2）
IPC大类 H01（8） C01（3）
IPC小类 H01L（8） C01B（3）
IPC H01L029/16（8） H01L029/78（8） H01L021/336（6）
H01L029/66（5） C01B031/04（3） H01L029/06（3）
H01L029/10（3） H01L029/778（3） H01L021/02（2）
H01L029/165（2） H01L029/417（2） H01L029/423（2）
H01L029/45（2）
发明人 LEE J H（11）
公开年 2015（8） 2014（3）
申请年 2014（11）
专利权人 SAMSUNG ELEC.（8） LEE J（2） LEE M（2） SHIN H（2）

Adhesive composition for light shield material of optical masking tape, comprises carbon dispersed solution, graphene oxide or graphene oxide dispersed solution, dispersion medium, and adhesive.

KIM J H, SIM K M, LEE J H, KIM H C

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Manufacture of graphite oxide for manufacture of graphene structure material, involves injecting oxidizing agent into graphite slurry of graphite and nitric acid and oxidizing graphite to form graphite oxide slurry, and washing slurry.

EOM S H, LEE J H

Manufacture of ester functional group-containing graphene compound for antibacterial composition, involves reacting graphene oxide obtained using graphene containing functional groups with thionyl chloride and then with alcohol.

LEE J H

Graphene transistor having tunable barrier has gate insulating layer that covers portion of graphene layer, gate electrode on gate insulating layer, such that energy barrier is between semiconductor substrate and graphene layer.

PARK J, SHIM J, PARK H, LEE J, LEE J H, PARK H Y, PARK J H, SHIM J W

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Semiconductor device for electronic apparatus, has graphene layer that is disposed on and connects source and semiconductor element, and spaced apart from drain.

WENXU X, KIM Y, MOON C, PARK Y, YANG W, LEE J, KIM Y S, MOON C Y, PARK Y Y, YANG W Y, LEE J Y, LEE J H

Nanopore FET device, has electrode layers arranged at respective opposite sides of nanopore on top surface of graphene layer, and insulating layer whose center region is removed such that center portion of graphene layer is exposed.

JEON T, SHIM J, EOM K, LEE D, LEE J, JEON T H, SHIM J Y, EOM K S, LEE D H, LEE J H

Method for transferring graphene during manufacturing graphene applied device that is used in e.g. high speed radio frequency switching device, involves transferring protection metal layer and graphene layer from supporter to substrate.

LEE J, KIM Y, MOON C, LEE S, LEE C, LEE J H, KIM Y S, MOON C Y, LEE S H, LEE C S

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H