国家/地区 韩国（12） 美国（4） 中国（2）
IPC部 H（9） B（7） C（4）
IPC大类 H01（9） B82（4） C01（4）
B01（2）
IPC小类 H01L（7） C01B（4） B01J（2）
B82B（2） B82Y（2） H01B（2）
H01M（2）
IPC C01B031/02（4） B82B003/00（2） C01B003/00（2）
H01B001/04（2） H01L021/205（2） H01L029/78（2）
H01L033/04（2） H01L051/00（2） H01M004/96（2）
发明人 LEE J H（12）
公开年 2012（12）
申请年 2011（7）  2010（5） 
专利权人 KWAN W L（3） LEE B H（3） LEE J H（3） REYUN K L（3）
SAMSUNG ELEC.（3） KOREA INST M.（2） SAMSUNG LED .（2） SNU R DB FOU.（2）
UNIV SEOUL N.（2） UNIV SUNGKYU.（2）

Method for coating substrate in manufacture of graphene-oxide coated substrate, involves preparing graphene-oxide dispersed solution, dipping substrate in graphene-oxide dispersed solution, and drying coated substrate.

HWANG T S, LEE J H, NAM J D, OH J S

Manufacture of bottom contact type FET, involves forming electrode on substrate as source and drain, coating graphene dispersion on substrate, absorbing oxide in interval between source and drain, and reducing absorbed graphene oxide.

LEE H Y, LEE J H, SEO S H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Graphene quantum dot light emitting device comprises first graphene; graphene quantum dot layer disposed on the first graphene and containing graphene quantum dots; and second graphene disposed on the graphene quantum dot layer.

HWANG S, KO G, SIM S, CHUNG H, SONE C, LEE J, HONG B, BAE S, HWANG S W, KO G W, SIM S H, CHUNG H J, SONE C S, LEE J H, HONG B H, BAE S K

Graphene light-emitting device e.g. LED comprises a p-type graphene doped with a p-type dopant, an n-type graphene doped with an n-type dopant, and an active graphene that is disposed between the p-type graphene and the n-type graphene.

HWANG S, KO G, SIM S, CHUNG H, SEONG H, SONE C, LEE J, KO H, CHOI S, KIM S, SUN W W, GUAN Y K, SUN H S, CHUNG H J, HAN K S, CHEOLSOO S, LEE Z H, HUYNH D K, HWANG S W, KO G W, SIM S H, SEONG H K, SONE C S, LEE J H, KO H D, CHOI S H, SHIM S, KO K, JEONG H, GO J, SON C

Apparatus for forming graphene-ball by spray pyrolysis, has gas service pipe, metal salt receiving container, hydrocarbon receiving container, metal salt pyrolysis part, pyrolysis reactor, ultrasonic oscillator and regular length heater.

LEE J H, LEE B H, KWAN W L, REYUN K L

Manufacture of composite graphene ball involves pyrolyzing microdroplets, forming carbon metal alloy particles, converting hydrocarbons into carbene precursors, and depositing carbine precursors on carbon metal alloy particles.

LEE J H, LEE B H, KWAN W L, REYUN K L, GWAN L R, HUN L B, HUN L J, U LEE G

Manufacture of graphene spheres for e.g. biosensor, involves preparing microspheres obtained by pyrolyzing aqueous solution containing metal precursor and hydrocarbon and then depositing carbene precursor on metal particles of microspheres.

LEE J H, LEE B H, KWAN W L, REYUN K L

Method for forming graphene pattern, involves locating metal layer at downward and outer side of removed oxide layer that is removes partial domain of oxide layer, and depositing exposure field graphene on chemical vapor deposition.

GWAN K J, HO J J, HYE L J, HYEOK C J, GEUN C D, DON K G, KIM J K, JEONG J H, LEE J H, CHOI J H, CHOI D G, KIM K D