国家/地区 韩国（10） 美国（6） 欧洲专利局（EPO）（3） 中国（2）
IPC部 C（7） H（7） B（6）
F（2）
IPC大类 H01（7） B82（4） C01（4）
C08（4） B32（2） C23（2）
F16（2）
IPC小类 H01L（6） B82Y（4） C01B（4）
C08K（3） C08L（3） B32B（2）
C08J（2） C23C（2） F16L（2）
IPC H01L029/16（4） H01L029/78（4） H01L029/786（4）
B82Y040/00（3） B82Y099/00（3） C01B031/02（3）
C08L101/00（3） H01L021/336（3） H01L029/778（3）
C08J005/18（2） C08K007/22（2） F16L059/00（2）
H01L021/683（2） H01L029/417（2） H01L029/423（2）
发明人 LEE J H（11）
公开年 2013（11）
申请年 2012（6）  2013（4） 
专利权人 SAMSUNG ELEC.（7） LEE J H（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Preparing a soluble graphene solution used in a petroleum refining process, by forming carbon oxide fiber by oxidizing carbon fiber, mixing carbon oxide fiber with polymer and polar solvent, and adding a reducing agent to mixed solution.

LEE J H, IN I S, LEE M Y, MIN B G, PARK S Y

Method for transferring graphene thin film for electric component, involves attaching supporting thin film to graphene film formed on substrate, removing substrate, and forming device including thin film attached with graphene film.

LEE K, KAHNG Y H, LEE J, LEE B H, LEE K H, LEE J H

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Method for manufacturing graphene device, involves forming device portion on first substrate, which is provided with graphene layer and attaching second substrate onto device portion and removing first substrate.

LEE C, LEE J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, MOON C Y, MUN Z R

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R

Resin plating method during manufacture of e.g. electronic equipment, involves forming graphene thin layer on resin substrate by applying expanded graphite dispersion to resin substrate and electroplating resin substrate.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S

Composite structures of graphene and polymer, useful in e.g. thermoelectric element, comprise polymer structure having three-dimensional shape, and graphene layer that is provided on polymer structure and covers part of polymer structure.

LEE E, CHOI B, CHA S, LEE J, WHANG D, CHA S N, CHOI B L, LEE E K, LEE J H, WHANG D M

Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.

LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M

Liquid curable composition, useful for producing aerogel graphene fullerene flake type sheet, comprises mixture containing silica aerogel, mixture consisting calcium carbonate, mixture consisting cement, and mixture containing boric acid.

LEE J H

Liquid hardening composition, useful for producing aerogel graphene fullerene flake type thermal curing sheet, comprises e.g. mixture containing silica aerogel, mixture containing aluminum hydroxide, and mixture containing boric acid.

LEE J H