国家/地区 美国（14） 韩国（8） 中国（6） 台湾（5） 德国（3）
IPC部 H（15） C（4）
IPC大类 H01（15） C01（4）
IPC小类 H01L（10） H01M（5） C01B（2）
C01G（2）
IPC H01L021/768（7） H01L023/532（6） H01M004/02（5）
H01M004/62（5） H01L023/522（4） H01M004/36（4）
H01M010/052（4） H01L023/528（3） H01M004/587（3）
H01L021/8234（2） H01L023/48（2） H01L029/40（2）
H01M004/13（2） H01M004/38（2） H01M004/48（2）
发明人 LEE M（15）
公开年 2022（8） 2023（7）
申请年 2022（15）
专利权人 TAIWAN SEMIC.（6） SK ON CO LTD（4） SAMSUNG ELEC.（3）

Noble metal-manganese oxide composite catalyst for a positive electrode of an aqueous rechargeable battery that regenerates a solvent of an aqueous electrolyte.

LEE M, KIM H, NO W J, JEONG M J, JO H, OH S H, CHO H, JUNG M J, NOJU, KIM H S, LEEMINAH

Method for manufacturing copper indium gallium selenide solar cell, involves forming graphene layer or montmorillonite layer on substrate, and forming copper indium gallium selenide light absorption layer on rear electrode.

KIM B, KEUM D, LEE M, KEUM D K, WON L M

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Semiconductor device has gate electrode, gate dielectric, channel layer with two-dimensional semiconductor material, where at location of gate electrode not vertically overlapping source and drain electrodes, height of gate electrode is defined from lowermost to uppermost surface of gate electrode.

SHIN H, CHO Y, SEOL M, LEE M

Semiconductor structure use in semiconductor integrated circuit industry, has dielectric layer formed on substrate, graphene conductive structure formed with graphene layer, and graphene layer extending direction parallel to inner side surface of dielectric layer.

LI M, LU M, LI S, ZHAN Y, YANG S, GUO Z, LEE M, CHAN Y, KUO T

Method for manufacturing semiconductor structure, involves forming graphene conductive structure on metal layer, where conductive graphene is filled in interconnection channel and electrically connected with contact piece.

LI M, YANG S, ZHAN Y, LI S, ZHONG J, YEH C, LEE M, CHAN Y, CHUNG C

Interconnection structure useful for semiconductor device, has more than one first conductive features disposed in first dielectric layer, where more than one first conductive features include first metal, and multiple graphene layers include second metal, which is different from first metal.

SUI X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Cathode composition used for lithium secondary battery, comprises cathode active material comprising cathode active material particles having secondary particle shape and cathode active material particles having single particle shape, and conductive material including linear-type conductive material.

LEE Y S, KIM J R, KIM J H, MIN J Y, BAE S W, LEE M R, LEE J Y, JANG H J, ZHANG X, LI Z, LI M, PAE S, MIN J, JIN Z, KIM J, LEE Y, LEE M, LEE J, CHANG H J

Semiconductor structure used in semiconductor device, has first graphene layer extending along top surface of the via; and metal line spanning graphene layer, where metal line includes line width decreasing as distance from graphene layer increases, and top surface of graphene layer is higher.

SHUE S, LEE M, YANG S

Anode active material used in secondary battery, comprises core particle, conductive particles formed on core particle, and polymer coating layer formed on core particle and conductive particles, where polymer coating layer comprises crown ether compound, where conductive particle is metal fiber.

LEE J H, MOON G H, KANG H G, LEE M R, LEE M, KANG H, HYEON M, LEE J