国家/地区 中国（30）
IPC部 H（27） C（8） B（3）
D（3）
IPC大类 H01（25） C01（5） C09（3）
D01（3） H05（3） B01（2）
IPC小类 H01L（19） H01M（7） C01B（4）
D01D（3） H05K（3） C09K（2）
H01B（2）
IPC H01L023/532（13） H01L021/768（12） H01L023/522（9）
H01L023/528（6） H01M004/62（5） H01L021/336（4）
H01L029/16（4） H01M004/02（4） D01D005/00（3）
H01L021/02（3） H01L023/48（3） H01L029/06（3）
H01L029/10（3） H01L029/417（3） H01L029/778（3）
发明人 LEE M（30）
公开年 2022（7） 2021（6） 2014（5） 2015（4） 2018（3） 2023（3）
申请年 2014（8）  2021（6）  2022（6）  2019（5）  2017（2） 
专利权人 TAIWAN SEMIC.（12） SAMSUNG ELEC.（6） LG CHEM LTD（4） LEE J（2）
LEE M（2） LG CHEM CO L.（2） SHIN H（2） UNIV GUANGDO.（2）

Semiconductor structure use in semiconductor integrated circuit industry, has dielectric layer formed on substrate, graphene conductive structure formed with graphene layer, and graphene layer extending direction parallel to inner side surface of dielectric layer.

LI M, LU M, LI S, ZHAN Y, YANG S, GUO Z, LEE M, CHAN Y, KUO T

Method for manufacturing semiconductor structure, involves forming graphene conductive structure on metal layer, where conductive graphene is filled in interconnection channel and electrically connected with contact piece.

LI M, YANG S, ZHAN Y, LI S, ZHONG J, YEH C, LEE M, CHAN Y, CHUNG C

Interconnection structure useful for semiconductor device, has more than one first conductive features disposed in first dielectric layer, where more than one first conductive features include first metal, and multiple graphene layers include second metal, which is different from first metal.

SUI X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Cathode composition used for lithium secondary battery, comprises cathode active material comprising cathode active material particles having secondary particle shape and cathode active material particles having single particle shape, and conductive material including linear-type conductive material.

LEE Y S, KIM J R, KIM J H, MIN J Y, BAE S W, LEE M R, LEE J Y, JANG H J, ZHANG X, LI Z, LI M, PAE S, MIN J, JIN Z, KIM J, LEE Y, LEE M, LEE J, CHANG H J

Intraconnection structure useful in a post-section process of an integrated circuit i.e. semiconductor device, has second portion of conductive layer adjacent to first portion of conductive layer, and dielectric material contacts first interface portion and third interface portion.

MU X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Integrated chip comprises substrate, first conductive component above substrate and second conductive component, upper portion of substrate and transversely adjacent to first conductive component where concave hole transversely separating first conductive component and second conductive component.

SUI X, LI M, CHUNG C, LU M, YANG S, SHUE S, LEE M

An anode active material for lithium secondary battery comprises a coating layer containing boron and conductive material, bonded to the surface of carbon-based particle.

LEE M R, KANG H G, LEE J H, LEE J, KANG H, LEE M, LI M, LI Z

Anode slurry used for forming anode used for lithium-sulfur batteries, comprises positive electrode active material, conductive material, binder and solvent.

LEE M, PARK E K, SHIN D, SOHN K, LEE M J, PARK E, SUN Q, PIAO E

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Field effect transistor has channels having hollow closed cross-sectional structure when viewed in first cross-section formed by plane across source and drain electrodes in direction perpendicular to substrate, and gate insulating layers.

YOO M, SHIN H, KWON J, LEE M, SEOL M, YU M, SHEN X, QUAN J, HYUN L, SHIN H J, YOO M S