国家/地区 韩国（9） 美国（5） 中国（2）
IPC部 H（8） C（5） B（2）
IPC大类 H01（8） C01（4） B32（2）
C23（2）
IPC小类 H01L（7） C01B（4） B32B（2）
C23C（2）
IPC H01L029/16（4） C01B031/04（2） C23C016/02（2）
H01L029/66（2） H01L035/14（2） H01L035/16（2）
发明人 LEE S（12）
公开年 2017（6） 2016（4） 2018（2）
申请年 2016（12）
专利权人 KOREA INST S.（3） SAMSUNG ELEC.（3） KOREA INST C.（2） UNIV PUKYONG.（2）

Thermoelectric semiconductor powder comprises graphene material which is selected from graphene, graphene oxide and reduced graphene oxide which is combined with thermoelectric semiconductor material, which has high specific surface area.

SHIN W H, LIM Y S, SEO W S, LEE S

Manufacture of graphene barrier film for e.g. electronic device, involves forming graphene precursor layer on catalyst layer, forming graphene layer and protective layer, removing catalyst layer and providing graphene layer to substrate.

KIM M J, SEO T H, LEE S, KIM S M, AHN S, BAE S, SON D I

Producing graphene composite material powder comprises e.g. heating mixture containing metal material and graphene powder by induction melting method to obtain mixed melt in which graphene is dispersed on metal material melt.

SOO L Y, SEON S W, LEE S

Gas sensor, has multiple graphene heating assemblies arranged on substrate, power supply unit for supplying electric power to graphene heating assemblies, and graphene layer provided with air stray-type graphene structure.

KIM C, LIM C, JUNG Y M, LEE D, CHOI J, SEO M, LEE T, KIM J H, LEE S, YOUNG T B

Photodetector for use as light-receiving device, has second graphene layer that is set on 2D material layer, and first electrode that is set on first graphene layer, and second electrode that is set on second graphene layer.

HEO J, PARK S, LEE K, LEE S, LEE E, LEE J, HEO J S, PARK S J, LEE K Y, LEE S Y, LEE E K, LEE J H

Semiconductor device, has graphene channel fixed between first and second source/drain regions, and substrate whose top surface lies in first plane, where bottom surfaces of first source/drain region and gate lie in second plane.

LIN M, LIN S, LEE S

Preparation of epoxy-based liquid crystal-grafted graphene material comprises preparing epoxy-based liquid crystal, preparing functionalized graphene mixed solution, and grafting.

LEE S, ZHOU S

Apparatus for graphene wet transfer comprises reservoir body having reservoirs, barrier structure which is located on reservoir and has separated space formed by barriers, and substrate frame which is located below barrier structure.

KIM C, LEE S, KIM J H, LEE T, SEO M, CHOI J, JHON Y M, WOO D H, LIM C

Graphene core electrical conductor of cable and of electric power transmission line, has graphite core which is surrounded by sheath and graphene core that is formed by compression of graphene particles.

GE C, LEE S

Semiconductor device i.e. transistor, for e.g. flat panel display, has diffusion stopper with stuffing layer partially adhered on area surface of graphene layer and including polycrystalline structure formed on areas of graphene layer.

KIM K, LEE S, KIM M, KIM K B, LEE S H, KIM K J, KIM M S