国家/地区 韩国（10） 美国（9） 中国（4） 日本（2）
IPC部 H（9） B（6） C（3）
IPC大类 H01（9） B82（5） B32（2）
C08（2）
IPC小类 H01L（8） B82Y（5） B32B（2）
H01B（2）
IPC H01L029/78（6） H01L021/336（5） B82Y099/00（4）
H01L029/10（3） H01L029/786（3） B82Y030/00（2）
B82Y040/00（2） H01L029/06（2） H01L029/16（2）
H01L029/772（2） H01L029/775（2） H01L051/05（2）
H01L051/30（2）
发明人 LEE S H（10）
公开年 2012（10）
申请年 2011（7）  2010（2） 
专利权人 SAMSUNG ELEC.（8） SNU R DB FOU.（2） UNIV SEOUL N.（2）

Ferromagnetic graphene for spin valve device, comprises ferromagnetic graphene having ferromagnetic characteristics and antidote(s) in ferromagnetic graphene.

LEE S, LEE S H

Adhesive useful for bonding aluminum-polyurethane composite material, comprises graphene oxide comprising epoxy, hydroxy or carboxylic acid group, and alkoxysilane compound comprising amine, epoxy, carboxylic acid, hydroxy or thiol group.

CHO H C, LEE S H, LEE D S, KANG K H, CHEOL C H, HUN L S, SU L D, HO G G, KANG K, LEE D, LEE S, CHO H

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Graphene electronic component e.g. radio frequency (RF) transistor, has gate electrode that is arranged on protective layer which is formed identical to shape of graphene channel layer between source electrode and drain electrode.

CHUNG H J, HEO J S, YANG H J, SEO S A, LEE S H, CHUNG H, HEO J, YANG H, SEO S, LEE S

Composition used for manufacturing graphene/polyimide electroconductive composites, comprises polyamic acid and graphene oxide.

LEE S H, NA S I, KU B C, KIM J K, HO L S, IN N S, CHEOL G B, GYEONG K J

Graphene substrate comprises a substrate, metal oxide film on the substrate, and graphene layer on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer.

CHUNG H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, SEO S A, LEE S H, HEO J S, YANG H J

Graphene electronic device e.g. field effect transistors, has graphene channel layer which is formed on gate insulating layer and source and drain electrodes are located on graphene channel layer.

HEO J, SEO S, LEE S, CHUNG H, YANG H, SEO S A, JUNG H, HUH J, HEO J S, LEE S H, CHUNG H J, YANG H J

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Graphene electronic device e.g. FET comprises a substrate configured to act as a gate electrode, a layer of gate oxide disposed on the substrate, a layer of hydrophobic polymer, a graphene channel layer, and a source and drain electrodes.

YANG H, SEO S, LEE S, CHUNG H, HEO J, YANG H J, SEO S A, LEE S H, CHUNG H J, HEO J S