国家/地区 美国（7） 韩国（6） 中国（4） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 H（7） C（4）
IPC大类 H01（7） C01（3） C23（3）
IPC小类 H01L（7） C01B（3） C23C（3）
IPC H01L023/532（4） C23C016/26（3） H01L021/768（3）
H01L027/108（3） C01B032/186（2） C23C016/02（2）
C23C016/505（2） C23C016/511（2） H01L021/02（2）
H01L021/285（2） H01L029/16（2） H01L029/45（2）
发明人 LIM H（7）
公开年 2020（3） 2022（3）
申请年 2020（2）  2021（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（7）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Wiring structure for use in semiconductor device, has first conductive pattern, ohmic contact pattern, oxidation prevention pattern, diffusion barrier, and second pattern sequentially stacked in stated order on substrate.

JEONG G, LEE S, YOON J, YAMAMOTO K, SHIN H, BYUN K, CHO M, LIM H, ZHENG G, LI Z, YOUN J, SHAN B, SHEN X, LIM H S, JO M, BYUN K E, SHIN H J, SU Y J, LEE S Y, JUNG K O

Wiring structure for use in electronic device e.g. memory device, has nanocrystalline graphene layer which is provided on substantial entirety of conductive material layer, seed layer is provided on another conductive material layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X