国家/地区 美国（10）
IPC部 H（9） C（4）
IPC大类 H01（8） C01（3）
IPC小类 H01L（7） C01B（3）
IPC H01L029/16（5） H01L029/66（5） H01L029/423（4）
H01L029/786（4） C01B031/04（3） H01L029/49（3）
H01L021/02（2） H01L029/10（2）
发明人 LIN M（10）
公开年 2020（2）
申请年 2020（3）  2014（2）  2019（2） 
专利权人 TAIWAN SEMIC.（4） UNIV TAIWAN .（3） LIN C（2） LIN M（2）
PAI C（2） SAMSUNG ELEC.（2） YOUNG FAST O.（2）

Transparent heating film for use in windshields of vehicles for defogging, has electrode layer provided with electrode circuit pattern, which is formed by mesh crossed with conductive wires, where electrode circuit pattern is electrically connected with local area of resistance layer.

LIN M, LIN C, HUANG H, PAI C

Forming transition metal dichalcogenide thin film on a substrate by treating substrate with metal organic material, and synthesizing a transition metal dichalcogenide on the substrate.

BYUN K, KIM H, PARK T, SHIN H, AHN W, LEEM M, CHO Y, JIN H, PIAO T, SHEN X, LIN M, ZHAO L, BYUN K E, KIM H S, PARK T J, SHIN H J, AHN W S, CHO Y C

Composite conducting agent used for forming electrode for lithium secondary battery, comprises carbonaceous conductive material, and graphene-silica composite comprising matrix comprising graphene and silicon suboxide and/or silicon dioxide.

KIM M, SON I, MAH S, LEE J, LIM M, CHOI J, HAN S, JIN M, SUN Y, MA X, LI Z, LIN M, CUI Z, MAH S K, LIMMINWOO, HYEON C

Transparent touch sensor for reducing local impedance of a transparent conductive film and product comprises a transparent first sensing layer which is made of a metal oxide or graphene and having first capacitive sensing strings.

PAI C, LIN M, LIN C, CHEN C

Method for forming semiconductor device e.g., transistor, involves transforming portion of carbon layer to graphene during annealing, removing metal layer and etching graphene to define channel and source/drain region from graphene.

LIN M, LIN S, LEE S

Method for forming e.g. transistor, involves performing anneal process, removing metal layer after performing anneal process, and etching graphene to define channel from graphene, where carbon layer is transformed into graphene.

LIN M, LIN S, LEE S

Semiconductor device, has graphene channel fixed between first and second source/drain regions, and substrate whose top surface lies in first plane, where bottom surfaces of first source/drain region and gate lie in second plane.

LIN M, LIN S, LEE S

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S

Graphene thin film of thermoelectric device, has sheet layers and connecting portions that form continuous graphene thin film structure, and connecting portions that are provided with graphene of monolayer of carbon atoms.

CHEN K, LIN M, JU S, HSIEH Y, CHEN K Y, LIN M C, JU S P, HSIEH Y P

Manufacturing graphene film comprises annealing first substrate in furnace filled with mixed gas, moving substrate into growing chamber of molecular beam epitaxy system, heating carbon source and depositing it on surface of substrate.

LIN S, LIN M, LIN S Y, LIN M Y