国家/地区 中国（8）
IPC部 C（5） H（3） B（2）
IPC大类 C01（3） H01（3） B82（2）
C30（2）
IPC小类 C01B（3） H01L（3） B82Y（2）
C30B（2）
IPC C01B031/04（3） B82Y030/00（2） C30B029/02（2）
H01L031/0216（2） H01L031/0224（2） H01L031/068（2）
发明人 LIN S（8）
公开年 2013（8）
申请年 2013（8） 
专利权人 HANGZHOU GEL.（7）

Graphene/silicon solar battery has back electrode, P-type silicon layer, n-type silicon layer, n-type doped graphene-containing layer and front electrode which are formed in order from bottom surface to top surface.

LIN S, LI X

Vertical type graphene LED chip, has first bonding metal layer provided with P-type electrode, N-type gallium nitride layer provided with N- type electrode, and second bonding metal layer provided with graphite layer.

LIN S, LI X

Graphene/silicon solar battery, has rear and front electrodes, P-type silicon layer and N-type doped graphene-containing layer that are fixed with each other, and carrier concentration of graphene-containing layer is specific in range.

LIN S, LI X

Preparation of graphene film involves subjecting non-metallic substrate in oxygen plasma cleaning machine, sending non-metallic substrate into vacuum reaction furnace, adding hydrogen, heat preserving, and placing substrate in quartz glass.

LI P, BAO Q, CHEN C, XU M, YUAN J, LIN S

Preparation of fluorinated graphene using atomic layer deposition device used for, e.g. electronic device by etching copper foil with graphene using corrosive solution, transferring in substrate, washing and reacting with fluorinating agent.

DONG C, LIN S

Chemical vapor deposition method for preparing dual-layer graphene involves regulating flow of carbon source gas and pressure intensity of reaction chamber under atmosphere of reductive gas and inert gas, and growing graphene film.

DONG C, LIN S

Preparation of single-crystal graphene comprises affixing graphite crystal to base area, coating layer with nickel and/or copper alloys, heating, annealing, cooling, immersing in iron chloride solution and removing metal layer and carbon.

LI X, LIN S

Preparation of single crystal graphene involves adhering graphene to silicon/silicon dioxide composite layer and then transferring to substrate, providing substrate into reaction chamber and supplying carbon source gas and reducing gas.

LIN S, LI X