国家/地区 中国（9）
IPC部 H（6） C（3）
IPC大类 H01（6）
IPC小类 H01L（3） H01M（2）
IPC H01L033/00（2） H01M004/1397（2）
发明人 LIU Z（9）
公开年 2011（9）
申请年 2011（7） 
专利权人 SUZHOU INST .（4） SUZHOU NANOW.（4） CHINESE ACAD.（2） UNIV PEKING（2）

Universal electronic slurry for use as conductive coating adhesive for graphene filler, has electrically conductive filler provided with graphite alkene, and conductive carbon black generated by conductive carbon material.

LIU Z, ZHANG Y, ZHOU X

Microwave graphene composite lithium iron phosphate positive pole material quickly preparing method, involves uniformly grinding reaction product to obtain graphene composite lithium iron phosphate positive pole material.

HUANG F, LIU Z

Modified graphene coated electrode pole piece for lithium secondary battery, has graphene layer coated on two surfaces of current collector foil.

LIU Z, TANG C, ZHANG J, ZHOU X, HU H

Growing method of group III nitride substrate involves providing support substrate, forming graphene layer on surface of group III nitride semiconductor layer and forming group III nitride semiconductor layer on graphene layer.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

LED preparation method, involves forming continuous graphene cover layer on surface of nanometer column array layer, and forming metal electrode layer on surface of cover layer, where array layer is provided with semiconductor substrate.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

Growing method of graphene involves placing nitride substrate in center portion of plate heater, supplying non-oxidizing gas and carbon-containing substance, stopping supply of carbon source, and cooling grown product.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

Preparation of single-layer graphene comprises catalyzing and growing graphene on surface of alloy substrate by using chemical vapor deposition method in hydrogen and inert atmosphere, and finishing preparing single-layer graphene.

FU L, LIU Z, DAI B

Metal-semiconductor electrode structure used for nano semiconductor electronic devices, consists of semiconductor layer, metal electrode, and graphene layer arranged between semiconductor layer and metal electrode.

CAI D, FAN Y, LIU L, LIU Z, WANG J, XU G, ZHANG X, ZHONG H

Preparation of graphene film involves plating carbon-containing metal, forming metal film, providing obtained silicon substrate, plating with metal film in vacuum annealing furnace and etching silicon substrate.

LIU N, FU L, LIU Z