国家/地区 中国（15）
IPC部 C（8） H（7）
IPC大类 H01（7） C01（6）
IPC小类 C01B（6） H01L（4） H01B（3）
IPC C01B031/04（4） C01B031/00（3） H01L031/18（3）
H01B007/17（2） H01B009/02（2） H01L031/0224（2）
H01L031/032（2） H01L031/107（2）
发明人 LU W（15）
公开年 2015（15）
申请年 2015（8）  2014（7） 
专利权人 UNIV ZHEJIAN.（8） NEW FAR EAST.（3） YUANDONG CAB.（3） YUANDONG COM.（3）

Intelligent Graphene/silicon array temperature humidity sensor, has A/D conversion module transmitting signal to microprocessor module, and electric source module connected with power supply module.

LU W, LUO J, WAN X, XU Y, YU B, WANG F, SHI T

Intelligent graphene modified pressing round large section cable conductor, has adjacent stranding layer covered on copper/aluminum conductor, and outermost layer formed above graphene-copper/aluminum mixing silk conductor.

CHEN D, HUANG M, LU Z, WANG X, ZHOU F, YUAN W, LU W, LAN Y

Preparation of fluorinated graphite/graphene heterojunction involves placing multi-graphene sample in reaction chamber, evacuating pressure, feeding sulfur hexafluoride gas, performing plasma excitation, reacting and removing sample.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Semi-suspension preparation graphene field effect transistor, has graphene component that is formed and transferred to set with groove of substrate, and metal layer that is formed on surface to form second photoresist image.

FENG Z, LI J, LIU Q, WEI C, LU W, HE Z

Growing P-type graphene comprises, at nitrogen-containing atmosphere, annealing silicon carbide substrate, and thermal decomposing.

CHEN X, GUO L, JIA Y, LU W, GUO Y

Preparation of fluorinated graphene involves adding graphene to reaction chamber, evacuating pressure inside reaction chamber, passing resultant product through sulfur hexafluoride gas, and performing plasma excitation of gas.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Preparing fluorinated graphene oxide involves performing oxidation of graphene into graphene oxide, and placing graphene oxide sample into pumping chamber of deep reactive etching machine.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Fluorinated graphene foam preparation method involves taking graphene foam sample, putting sampling indoor deep reaction etching machine, pumping, putting into reaction cavity, and pumping using sulfur hexafluoride gas.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Transferring of fluorinated graphene involves fluorinating graphene samples, spin coating with polymethyl methacrylate, heating, placing treated sample in electrolyte, stripping original substrate, immersing sample in water and drying.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Graphene and nano-wire heterojunction detector switch ratio improving method, involves growing epitaxy indium arsenic nano-wire on gallium arsenic substrate, and forming graphene leakage terminal of substrate as gate electrode.

CHEN P, CHEN X, GUO N, HU W, LI T, MIAO J, LU W, WANG P, LUO W