国家/地区 中国（21）
IPC部 G（7） H（7） B（5）
C（5） D（2）
IPC大类 G01（7） H01（7） B82（3）
C01（3） C09（2）
IPC小类 G01J（6） H01M（4） B82Y（3）
C01B（3）
IPC G01J005/24（5） B82Y040/00（3） H01M010/0525（3）
B82Y030/00（2） C01B003/00（2） H01M004/13（2）
H01M004/139（2） H01M004/36（2） H01M004/58（2）
发明人 PAN H（21）
公开年 2021（21）
申请年 2021（14）  2020（6） 
专利权人 BEIJING NORT.（6） UNIV ZHEJIAN.（3） UNIV SHANGHA.（2）

High-flexibility integrated super capacitor comprises hydrogel electrolyte layer and conductive polymer/graphene oxide composite electrode which are deposited on two sides of hydrogels, where hydroglactic acid layer is ammonium alginate-polyacrylic acid polyacrylamide hydrogal electrolyte.

PAN H, LIU Y, SUN C

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Thermosymmetric infrared detector for use in e.g. mobile phone application field, has column-level analogue front end circuit for performing trans impedance amplification to two paths of current and outputs as output voltage.

PAN H, WU P, DI G

Infrared focal plane detector for mobile phone application field, has column-level analogue front end circuit that obtains two paths of current according to bias voltages, performs trans-impedance amplification to difference of generated two paths of current and outputs as output voltage.

WU P, PAN H, DI G

Complementary metal oxide semiconductor (CMOS) process based infrared micro-bridge detector for mobile phone application field, has column level analog front end circuit that performs transimpedance amplification on difference between two generated currents to output as output voltage.

PAN H, WU P, DI G

Complementary metal-oxide-semiconductor (CMOS) infrared detector for use in monitoring market, has column-level analog front-end circuit that obtains paths of currents according to main and sub bias voltages, and performs transimpedance amplification on difference between paths of generated current.

WU P, PAN H, DI G

Infrared detector with multilayer structure based on complementary metal-oxide semiconductor technology used in mobile phone application field, has columnar structure directly electrically connected with supporting base in reflecting layer and corresponding beam structure.

PAN H, WU P, DI G, ZHAI G

Circuit breaker arc extinguishing chamber of ablation-resistant fast arc extinguishing, has graphene material that is covered on surface of static contact, and V-shaped structure nozzle that is set on moving contact and static contact.

MA Y, SHEN L, PAN H, LIU G, ZHOU F, MA H, HE S, LIAO M, PENG Z, YAN B

Preparing graphene-loaded nano flaky transition metal hydride involves mixing transition metal chloride, lithium hydride, graphene and organic solvent under inert gas protection and heating for reaction and separating to get solid substance.

LIU Y, REN Z, ZHANG X, PAN H, GAO M

Graphene air purifier, has shell whose middle part is provided with purifying chamber that is provided with graphene air purifying material, where upper part of shell is provided with exhaust fan and upper part of fan is provided with air outlet hole.

PAN H, HONG R, SHEN Z