国家/地区 韩国（14） 美国（10） 中国（3） 欧洲专利局（EPO）（2）
IPC部 H（9） B（7） C（6）
IPC大类 H01（9） C01（6） B82（5）
C23（2）
IPC小类 H01L（9） C01B（6） B82Y（3）
B82B（2） C23C（2）
IPC C01B031/02（6） H01L029/06（6） H01L029/16（6）
H01L029/78（6） H01L021/336（5） H01L029/786（5）
H01L029/66（4） H01L029/08（3） H01L029/10（3）
B82B003/00（2） B82Y010/00（2） C01B031/04（2）
C23C016/26（2） H01L029/423（2） H01L029/739（2）
发明人 PARK S（14）
公开年 2014（9） 2015（3） 2013（2）
申请年 2013（14）
专利权人 SAMSUNG ELEC.（9） PARK S（4） UNIV SEOUL N.（4） BYUN K（3）
CHUNG H（3） HEO J（3） LG ELECTRONI.（3） SEO D（3）
SNU R DB FO.（3） SONG H（3） LEE J（2）

Graphene film comprises substrate, graphene layer provided on substrate, and charge transport layer comprising nanowires provided between substrate and graphene layer.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Producing reduced graphene oxide, comprises preparing graphene oxide dispersion solution, and refluxing prepared dispersion solution.

PARK S, PARK G T

Graphene memory has Schottky barrier that is formed between conductive semiconductor substrate and graphene layer such that graphene layer is used as charge-trap layer for storing charges.

LEE J, CHUNG H, PARK S, BYUN K, SEO D, SONG H, HEO J, LEE J H, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S, HUH J, JUNG H, SONG C, SAIL D

Electronic device e.g. field effect transistor (FET) has graphene that directly contacts area of semiconductor layer, and metal layer on graphene.

BYUN K, PARK S, SEO D, SONG H, LEE J, CHUNG H, HEO J, BYUN K E, PARK S J, SONG H J, LEE J H, CHUNG H J, HEO J S

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Graphene switching device for use as diode has gate electrode which is provided on gate insulation layer arranged on graphene layer set on insulation layer.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S

Memory device having FET structure, comprises graphene switching device having source, drain and gate electrodes and including Schottky barrier between drain electrode and channel in direction from source electrode toward drain electrode.

SEO D, KIM H, CHUNG H, PARK S, BYUN K, SONG H, HEO J, KIM H J, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J