国家/地区 韩国（17） 美国（10） 中国（4） 欧洲专利局（EPO）（3） 世界知识产权组织（2）
IPC部 H（11） C（8） B（4）
IPC大类 H01（11） C01（7） B82（4）
C23（3）
IPC小类 C01B（7） H01L（6） B82B（3）
C23C（3） H01J（3） H01G（2）
IPC C01B031/04（6） H01L029/16（4） H01L029/78（4）
B82B003/00（3） H01J001/30（3） H01J001/304（3）
H01J009/02（3） H01L029/66（3） C23C016/18（2）
H01J001/308（2） H01L029/165（2） H01L029/267（2）
H01L029/778（2） H01L031/0224（2） H01L031/028（2）
发明人 PARK S（17）
公开年 2015（8） 2014（6） 2016（3）
申请年 2014（17）
专利权人 SAMSUNG ELEC.（8） KUMOH NAT IN.（3） AICT（2） KUMOH NAT IN.（2）
PURITECH CO .（2） UNIV SEOUL N.（2） UNIV SUNGKYU.（2）

Improvement of electrical energy storage capability of graphene material used in fiber complex, involves heat-treating graphene or material containing graphene at preset temperature in presence of acid and reforming surface of graphene.

PARK S, SHIN M K, KIM H, CHO Y, CHO K

Fiber composite used in e.g. electronic device, comprises microfiber bundles formed by bonding graphene flakes and carbon nanotubes, nanofiber coated with coating material, electrolyte filled in nanofiber web and insulating film.

PARK S, SHIN M K, KIM H, YEO C, CHO Y, CHO K

Electrical device comprises graphene layer that is formed at upper side of a carbon nanotube layer, where the carbon nanotube layer is formed at upper side of an elastomer.

YI J, NAM I, BAE S, PARK S, YOO Y G

Electron-emissive element, has graphene emitter adhered on emitter supporting unit and metal mesh, insulating layer provided with gate electrode, and gate supporting unit supported with graphene gate.

PARK S, LEE D, KIM I, SUNG J, LEE C, KANG D, YU E, PARK S H, LEE D G, KIM I H, SUNG J K, LEE C S, KANG D S, YU E A

Manufacture of iron oxide-graphene composite for oxidation-reduction catalyst, involves producing dispersion solution by dispersing exfoliated graphene oxide in solvent, adding iron precursor and hydrothermally reacting.

PARK S, LEE S J

Three-dimensional porous oxide graphene nanostructure used for agent for absorbing organic material, comprises porous oxide graphene including carbon skeleton of honeycomb structure, and carbon skeleton-containing silicon coating layer.

PARK H S, KANG S O, PARK S

Inverter e.g. vertical-type inverter, has second transistor that includes second channel unit including second graphene layer and n-type second two-dimensional (2D) semiconductor layer contacting second graphene layer.

HEO J, PARK S, SHIN H, HEO J S, PARK S J, SHIN H J

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Preparation of organic microbubble complex particles used for ultrasound contrast agent comprises sonicating aqueous solution including graphene compound and amphiphilic material in presence of gas comprising inert gas or carbon dioxide.

CHAR K, PARK S

Field emission device for use in lighting apparatus, has electron emission source that comprises multiple graphene thin films that are vertically supported in cathode electrode toward opening.

JEONG T, KIM I, KIM Y, LEE D, PARK S, LEE D G, PARK S H, KIM Y C, KIM I H, JEONG T W