国家/地区 韩国（13） 美国（13） 中国（8） 欧洲专利局（EPO）（4） 世界知识产权组织（4） 日本（2）
IPC部 H（10） C（7） B（5）
IPC大类 H01（10） C01（6） B01（2）
C08（2） C23（2）
IPC小类 C01B（6） H01L（6） B01J（2）
C08K（2） C23C（2） H01M（2）
IPC C01B031/04（5） H01L029/16（4） H01L021/02（3）
C01B032/19（2） C01B032/194（2） C08K003/04（2）
H01L021/033（2） H01L023/532（2） H01L029/06（2）
H01L029/66（2） H01L051/00（2） H01M004/02（2）
H01M004/04（2） H01M004/133（2） H01M004/134（2）
发明人 PARK S（14）
公开年 2017（9） 2016（5）
申请年 2016（14）
专利权人 SAMSUNG ELEC.（8）

Photomask pellicle for protecting photomask in exposure process using light including extreme UV (EUV), has nanocrystalline graphene that comprises nanocrystalline crystal grains and grains comprise two dimensional carbon structure.

SHIN H J, SONG H J, PARK S J, SHIN K W, LEE C S, SHIN H, SONG H, PARK S, SHIN K, LEE C

Composite material used in manufacture of fused deposition modeling-type three-dimensional printer polymer filament, comprises specified amount of graphene-coated metal nanoparticles, nanocarbons and polymer resin.

HWANG J, PARK S G, LIM J S, JO W, LEE H J, MOON M, KU B, HWANG J Y, JO W J, MOON M W, KU B C, HUANG J, PARK S, LIN C, ZHAO Y, LEE H, YEON H J, GYU P S, SEONG I J, JIN C W, JU L H, UN M M, CHEOL G B, LIM J

Manufacture of magnetic iron oxide-graphene composite used in electromagnetic interference-shielding composition, involves mixing graphite and iron halide, heat-treating, reacting product with alkylamine, and ultrasonically-processing.

PARK S H, SOHN K N, KWON W J, YANG S B, PARK S, SOHN K, KWON W, YANG S

Photodetector for use as light-receiving device, has second graphene layer that is set on 2D material layer, and first electrode that is set on first graphene layer, and second electrode that is set on second graphene layer.

HEO J, PARK S, LEE K, LEE S, LEE E, LEE J, HEO J S, PARK S J, LEE K Y, LEE S Y, LEE E K, LEE J H

Hybrid interconnect structure for use in electronic device, has interfacial bonding layer formed between non-metallic material layer and graphene layer or metal and graphene layers, where bonding layer is formed with metallic material.

SHIN K, SHIN H, KIM C, LEE C, PARK S, SONG H

Composite used in electrode, comprises carbonaceous material, silicon structures comprising silicon and silicon oxide provided on carbonaceous material, and graphene layer comprising graphene provided on silicon structures.

SON I, PARK J, PARK S, CHOI J, SON I H, PARK J H, PARK S Y, CHOI J M

Making graphene composite used to make active material for supercapacitor, involves radiating microwave on graphite oxide-conducting agent mixture, dispersing formed material in liquid and ultrasonic-wave pulverizing, and freeze-drying.

YEON S, JEON M, SHIN K, JIN C, LEE B, PARK S, KIM D, LEE S H, YEON S H, JIN C S, JEON M S, LEE B S, SHIN K H, PARK S K, KIM D H

Multilayer structure for electronic device has diffusion barrier layer between first material layer and second material layer, that includes non-graphene-based two-dimensional (2D) material.

SONG H, NAM S, PARK S, SHIN K, SHIN H, LEE J, LEE C, CHO Y, SONG H J, NAM S G, PARK S J, SHIN K W, SHIN H J, LEE J H, LEE C S, CHO Y C, NA S, ZHAO L

Formation of graphene nanopattern used in manufacture of graphene-containing device, involves forming block copolymer including regions on graphene layer and forming mask pattern as etching mask by removing regions, and pattering.

JEONG S, PARK S, LEE Y, ZHENG C, LI R, JEONG S J, PARK S J, LEE Y S

Manufacture of graphene used in manufacture of e.g. display apparatus, involves adding graphite-based material to fluid containing solvent and rotating fluid to perform delamination of graphite-based material by shear force.

KIM T, PARK S, YOUNG K T, JUN P S