国家/地区 韩国（8） 美国（6） 日本（3） 中国（2）
IPC部 H（7） B（4） C（2）
IPC大类 H01（7） B82（2） C01（2）
IPC小类 H01L（6） B82Y（2） C01B（2）
IPC H01L021/336（6） H01L029/78（6） H01L029/06（4）
H01L029/16（4） H01L029/786（4） B82Y099/00（2）
C01B031/02（2） H01L029/08（2） H01L029/417（2）
H01L029/423（2） H01L029/66（2） H01L029/772（2）
H01L029/778（2） H01L051/05（2） H01L051/30（2）
发明人 PARK S（8）
公开年 2013（8）
申请年 2012（5）  2013（2） 
专利权人 SAMSUNG ELEC.（6） INHA IND PAR.（2）

Preparing carbon nitride-graphene complex useful as catalyst in oxygen reduction reaction for fuel cell, comprises preparing graphite oxide dispersion solution, and adding cyanamide to dispersion solution and refluxing.

PARK S, OH J H

Graphene switching device comprises first electrode and insulating layer in semiconductor substrate forming energy barrier between graphene layer and electrode, metal particles, second electrode, gate insulating layer and gate electrode.

SEO D, KIM S, PARK S, YUN Y, LEE Y Y, LEE C, DAVID S, KIM S W, PARK S J, YUN Y J, LEE Y H

Manufacture of boron-doped reduced graphene oxide used for electrode of capacitor, involves dispersing graphene oxide into aqueous solvent, adding borane-tetrahydrofuran to obtained dispersion solution, then refluxing, and cooling.

PARK S, HAN J W

Three-dimensional zero gap semiconductor graphene switching device, has graphene layer surrounding end portion of semiconductor layer, and gate insulation layer surrounding graphene layer, where gate surrounds insulation layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, YANG H, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, YANG H J, CHUNG H J

Manufacturing graphene electronic device involves making metal compound layer and catalyst layer on substrate, growing graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

LEE C S, KIM S W, PARK S J, SEO D, YUN Y J, LEE Y H, LEE C, PARK S, YUN Y

Electrode structure for semiconductor device e.g. FET used in electronic device, has graphene layer that is configured to contact one of semiconductor layer and electrode containing metal.

YANG H, PARK S, CHUNG H, HEO J, YANG H J, PARK S J, CHUNG H J, HEO J S, HUH J, JUNG H

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Method for transferring graphene, involves forming trench on substrate, arranging graphene layer using additive liquid on substrate, pressurizing graphene layer on substrate, and removing additive liquid from substrate by drying.

SEOK S H, SEONG H J, JONG J H, JUN Y H, JUN P S, JAE S H, SEO D, HEO J, CHUNG H, YANG H, PARK S, SONG H, HEO J S, CHUNG H J, YANG H J, PARK S J, SONG H J